There are no models available for this part yet.
Overview of IPU80R1K0CEAKMA1 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 2 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IPU80R1K0CEAKMA1 by Infineon Technologies AG
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
IPU80R1K0CEAKMA1
|
Avnet Americas | 800V CoolMOS N-Channel Power MOSFET - Rail/Tube (Alt: IPU80R1K0CEAKMA1) RoHS: Compliant Min Qty: 447 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 124500 Partner Stock |
|
$0.7314 / $0.8170 | Buy Now | |
| Rochester Electronics | IPU80R1K0CE - 800V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 1495 |
|
$0.6945 / $0.8170 | Buy Now |
CAD Models for IPU80R1K0CEAKMA1 by Infineon Technologies AG
Part Data Attributes for IPU80R1K0CEAKMA1 by Infineon Technologies AG
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Package Description
|
IPAK-3
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
4 Weeks
|
|
Samacsys Manufacturer
|
Infineon
|
|
Avalanche Energy Rating (Eas)
|
230 mJ
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
800 V
|
|
Drain Current-Max (ID)
|
5.7 A
|
|
Drain-source On Resistance-Max
|
0.95 Ω
|
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-251
|
|
JESD-30 Code
|
R-PSIP-T3
|
|
JESD-609 Code
|
e3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
IN-LINE
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Pulsed Drain Current-Max (IDM)
|
18 A
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
TIN
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IPU80R1K0CEAKMA1
This table gives cross-reference parts and alternative options found for IPU80R1K0CEAKMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPU80R1K0CEAKMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPP06N80C3XK | Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPU80R1K0CEAKMA1 vs SPP06N80C3XK |
| SPD06N80C2 | Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-252, DPAK-3 | Infineon Technologies AG | IPU80R1K0CEAKMA1 vs SPD06N80C2 |