IPU80R3K3P7AKMA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 800V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

Overview of IPU80R3K3P7AKMA1 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 9 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IPU80R3K3P7AKMA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # IPU80R3K3P7AKMA1-ND
DigiKey MOSFET N-CH 800V 1.9A TO251-3 Min Qty: 1500 Lead time: 17 Weeks Container: Tube Limited Supply - Call
  • 1,500 $0.3302
$0.3302 Buy Now
DISTI # IPU80R3K3P7AKMA1
Avnet Americas LOW POWER_NEW - Rail/Tube (Alt: IPU80R3K3P7AKMA1) RoHS: Compliant Min Qty: 1163 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 150000 Partner Stock
  • 1 $0.3135
  • 25 $0.3072
  • 100 $0.2947
  • 500 $0.2822
  • 1,000 $0.2665
$0.2665 / $0.3135 Buy Now
DISTI # IPU80R3K3P7AKMA1
Avnet Americas LOW POWER_NEW - Rail/Tube (Alt: IPU80R3K3P7AKMA1) RoHS: Compliant Min Qty: 1500 Package Multiple: 75 Container: Tube 0
RFQ
DISTI # 726-IPU80R3K3P7AKMA1
Mouser Electronics MOSFETs N RoHS: Compliant 30
  • 1 $0.8000
  • 10 $0.7160
  • 100 $0.4580
  • 500 $0.3920
  • 1,000 $0.3470
  • 1,500 $0.3270
  • 4,500 $0.3210
  • 10,500 $0.3180
  • 24,000 $0.3150
$0.3150 / $0.8000 Buy Now
Future Electronics Single N-Channel 800 V 3.3 Ohm 6 nC CoolMOS™ Power Mosfet - IPAK RoHS: Compliant pbFree: Yes Min Qty: 1500 Package Multiple: 75 Lead time: 17 Weeks Container: Tube 0
Tube
  • 75 $0.3300
  • 3,000 $0.3200
  • 4,500 $0.3200
  • 7,500 $0.3150
  • 15,000 $0.3050
$0.3050 / $0.3300 Buy Now
Future Electronics Single N-Channel 800 V 3.3 Ohm 6 nC CoolMOS™ Power Mosfet - IPAK RoHS: Compliant pbFree: Yes Min Qty: 1500 Package Multiple: 75 Lead time: 17 Weeks Container: Tube 0
Tube
  • 75 $0.3300
  • 3,000 $0.3200
  • 4,500 $0.3200
  • 7,500 $0.3150
  • 15,000 $0.3050
$0.3050 / $0.3300 Buy Now
Rochester Electronics IPU80R3K3 - 800V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 150000
  • 1 $0.3135
  • 25 $0.3072
  • 100 $0.2947
  • 500 $0.2822
  • 1,000 $0.2665
$0.2665 / $0.3135 Buy Now
DISTI # IPU80R3K3P7
TME Transistor: N-MOSFET, unipolar, 800V, 1.3A, 18W, IPAK Min Qty: 1 0
  • 1 $1.3170
  • 5 $0.7590
  • 25 $0.6700
  • 75 $0.6140
$0.6140 / $1.3170 RFQ
DISTI # SP001636448
EBV Elektronik LOW POWER_NEW (Alt: SP001636448) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for IPU80R3K3P7AKMA1 by Infineon Technologies AG
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Part Data Attributes for IPU80R3K3P7AKMA1 by Infineon Technologies AG

IPU80R3K3P7AKMA1
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
End Of Life
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
IPAK-3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
2 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
800 V
Drain-source On Resistance-Max
3.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-251
JESD-30 Code
R-PSIP-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
3.8 A
Surface Mount
NO
Terminal Finish
Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IPU80R3K3P7AKMA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 800V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
    VS

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