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Part Details for IPW60R024P7XKSA1 by Infineon Technologies AG
Results Overview of IPW60R024P7XKSA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
IPW60R024P7XKSA1 Information
IPW60R024P7XKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPW60R024P7XKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
42AH1847
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Newark | Mosfet, n-Ch,600V,101A,150Deg C,291W Rohs Compliant: Yes |Infineon IPW60R024P7XKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 560 |
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$9.2300 / $14.5600 | Buy Now |
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DISTI #
79AH3169
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Newark | High Power_New Rohs Compliant: Yes |Infineon IPW60R024P7XKSA1 RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk | 210 |
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$7.2900 | Buy Now |
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DISTI #
IPW60R024P7XKSA1
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Avnet Americas | Transistor MOSFET N-CH 600V 101A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R024P7XKSA1) RoHS: Not Compliant Min Qty: 30 Package Multiple: 1 Lead time: 17 Weeks, 0 Days Container: Tube | 210 |
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$5.8720 / $7.7812 | Buy Now |
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DISTI #
C1S322000785544
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Chip One Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Tube | 312 |
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$6.5400 / $9.6100 | Buy Now |
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DISTI #
SP001866180
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EBV Elektronik | Transistor MOSFET N-CH 600V 101A 3-Pin TO-247 Tube (Alt: SP001866180) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 18 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 650V 101A TO247-3-41 / N-Channel 650 V 101A (Tc) 291W (Tc) Through Hole PG-TO247-3-41 | 100 |
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$8.5676 / $12.8514 | Buy Now |
Part Details for IPW60R024P7XKSA1
IPW60R024P7XKSA1 CAD Models
IPW60R024P7XKSA1 Part Data Attributes
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IPW60R024P7XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPW60R024P7XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 101A I(D), 600V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 406 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 101 A | |
| Drain-source On Resistance-Max | 0.024 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 386 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |