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Part Details for IPW60R037P7 by Infineon Technologies AG
Overview of IPW60R037P7 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPW60R037P7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPW60R037P7
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TME | Transistor: N-MOSFET, unipolar, 600V, 48A, 255W, PG-TO247-3, ESD Min Qty: 1 | 14 |
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$5.1700 / $6.7800 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 240 |
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$7.1390 / $12.7180 | Buy Now |
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Win Source Electronics | 600V CoolMOSª P7 Power Transistor | 15920 |
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$2.4000 / $3.1000 | Buy Now |
Part Details for IPW60R037P7
IPW60R037P7 CAD Models
IPW60R037P7 Part Data Attributes
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IPW60R037P7
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPW60R037P7
Infineon Technologies AG
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 295 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 76 A | |
| Drain-source On Resistance-Max | 0.037 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 255 W | |
| Pulsed Drain Current-Max (IDM) | 280 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPW60R037P7
This table gives cross-reference parts and alternative options found for IPW60R037P7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW60R037P7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SIHG73N60E-E3 | Vishay Siliconix | Check for Price | TRANSISTOR POWER, FET, FET General Purpose Power | IPW60R037P7 vs SIHG73N60E-E3 |
| SIHG73N60E-E3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 73A I(D), 600V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | IPW60R037P7 vs SIHG73N60E-E3 |
| APT77N60SC6 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 77A I(D), 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | IPW60R037P7 vs APT77N60SC6 |
| APT77N60BC6 | Microchip Technology Inc | $13.4773 | Power Field-Effect Transistor, 77A I(D), 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | IPW60R037P7 vs APT77N60BC6 |
| IXFH80N65X2 | IXYS Corporation | $9.5816 | Power Field-Effect Transistor, | IPW60R037P7 vs IXFH80N65X2 |
| APT77N60BC6 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 77A I(D), 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | IPW60R037P7 vs APT77N60BC6 |
| IXFH80N65X2 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, | IPW60R037P7 vs IXFH80N65X2 |