Part Details for IPW60R060P7 by Infineon Technologies AG
Overview of IPW60R060P7 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPW60R060P7
| Part # | Distributor | Description | Stock | Price | Buy | |
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CHIPMALL.COM LIMITED | 600V 30A 164W 60m@10V,15.9A 3.5V@0.8mA 1 N-Channel TO-247-3 MOSFETs ROHS | 160 |
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$1.7835 / $1.8653 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 240 |
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$4.4170 / $9.7960 | Buy Now |
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LCSC | 600V 30A 164W 60m10V15.9A 3.5V0.8mA 1 N-channel TO-247-3 MOSFETs ROHS | 195 |
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$1.7667 / $2.8242 | Buy Now |
Part Details for IPW60R060P7
IPW60R060P7 CAD Models
IPW60R060P7 Part Data Attributes
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IPW60R060P7
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPW60R060P7
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 159 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 151 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |