Part Details for IPW60R199CP by Infineon Technologies AG
Overview of IPW60R199CP by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IPW60R199CP
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPW60R199CP
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Mouser Electronics | MOSFET N-Ch 650V 16A TO247-3 CoolMOS CP RoHS: Compliant | 3 |
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$2.3400 / $4.8000 | Buy Now |
DISTI #
SMC-IPW60R199CP
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 480 |
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RFQ |
Part Details for IPW60R199CP
IPW60R199CP CAD Models
IPW60R199CP Part Data Attributes
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IPW60R199CP
Infineon Technologies AG
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Datasheet
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IPW60R199CP
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-247 | |
Package Description | GREEN, PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 436 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.199 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 139 W | |
Pulsed Drain Current-Max (IDM) | 51 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPW60R199CP
This table gives cross-reference parts and alternative options found for IPW60R199CP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW60R199CP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPW60R199CPFKSA1 | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPW60R199CP vs IPW60R199CPFKSA1 |
IPI60R199CPXKSA1 | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPW60R199CP vs IPI60R199CPXKSA1 |
IPP60R199CP | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPW60R199CP vs IPP60R199CP |
IPI60R199CPXKSA2 | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPW60R199CP vs IPI60R199CPXKSA2 |
IPI60R199CP | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Infineon Technologies AG | IPW60R199CP vs IPI60R199CP |
NTPF190N65S3H | Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 16 A, 190 mΩ, TO220F, 1000-TUBE | onsemi | IPW60R199CP vs NTPF190N65S3H |