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Part Details for IPW60R199CPFKSA1 by Infineon Technologies AG
Overview of IPW60R199CPFKSA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPW60R199CPFKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IPW60R199CPFKSA1-ND
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DigiKey | MOSFET N-CH 600V 16A TO247-3 Min Qty: 240 Lead time: 15 Weeks Container: Tube | Limited Supply - Call |
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$3.0851 | Buy Now |
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DISTI #
IPW60R199CPFKSA1
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Avnet Americas | MOSFET HIGH POWER BEST IN CLASS - Rail/Tube (Alt: IPW60R199CPFKSA1) RoHS: Not Compliant Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$2.5155 / $3.0546 | Buy Now |
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DISTI #
726-IPW60R199CPFKSA1
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Mouser Electronics | MOSFET N-Ch 650V 16A TO247-3 CoolMOS CP RoHS: Compliant | 0 |
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Order Now | |
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Future Electronics | 600V 16A 199mOhm N-ch TO-247 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube | 0Tube |
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$2.7400 / $3.0400 | Buy Now |
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DISTI #
IPW60R199CPFKSA1
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Avnet Americas | MOSFET HIGH POWER BEST IN CLASS - Rail/Tube (Alt: IPW60R199CPFKSA1) RoHS: Not Compliant Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$2.5155 / $3.0546 | Buy Now |
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DISTI #
IPW60R199CPFKSA1
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TME | Transistor: N-MOSFET, unipolar, 600V, 16A, 139W, PG-TO247-3 Min Qty: 1 | 0 |
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$4.2000 / $5.6600 | RFQ |
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DISTI #
IPW60R199CPFKSA1
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Avnet Americas | MOSFET HIGH POWER BEST IN CLASS - Rail/Tube (Alt: IPW60R199CPFKSA1) RoHS: Not Compliant Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
|
$2.5155 / $3.0546 | Buy Now |
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DISTI #
SP000089802
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EBV Elektronik | MOSFET HIGH POWER BEST IN CLASS (Alt: SP000089802) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 2 Weeks, 2 Days | EBV - 0 |
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Buy Now | |
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DISTI #
1471756
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element14 Asia-Pacific | MOSFET, N, 600V, TO-247 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$2.6273 / $4.8290 | Buy Now |
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DISTI #
1471756
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Farnell | MOSFET, N, 600V, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each | 0 |
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$2.2853 / $5.6446 | Buy Now |
Part Details for IPW60R199CPFKSA1
IPW60R199CPFKSA1 CAD Models
IPW60R199CPFKSA1 Part Data Attributes
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IPW60R199CPFKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPW60R199CPFKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247 | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 436 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.199 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 51 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPW60R199CPFKSA1
This table gives cross-reference parts and alternative options found for IPW60R199CPFKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW60R199CPFKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPI60R199CPXKSA1 | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPW60R199CPFKSA1 vs IPI60R199CPXKSA1 |
| IPP60R199CP | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPW60R199CPFKSA1 vs IPP60R199CP |
| IPI60R199CPXKSA2 | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPW60R199CPFKSA1 vs IPI60R199CPXKSA2 |
| IPI60R199CP | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Infineon Technologies AG | IPW60R199CPFKSA1 vs IPI60R199CP |
| NTPF190N65S3H | Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 16 A, 190 mΩ, TO220F, 1000-TUBE | onsemi | IPW60R199CPFKSA1 vs NTPF190N65S3H |