Datasheets
IPW65R019C7 by:

Power Field-Effect Transistor, 75A I(D), 650V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3

Part Details for IPW65R019C7 by Infineon Technologies AG

Results Overview of IPW65R019C7 by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

IPW65R019C7 Information

IPW65R019C7 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPW65R019C7

Part # Distributor Description Stock Price Buy
Chip 1 Exchange INSTOCK 190
RFQ

Part Details for IPW65R019C7

IPW65R019C7 CAD Models

IPW65R019C7 Part Data Attributes

IPW65R019C7 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPW65R019C7 Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 650V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-247
Package Description GREEN, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 583 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 496 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPW65R019C7

This table gives cross-reference parts and alternative options found for IPW65R019C7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW65R019C7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPZ65R019C7 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 75A I(D), 650V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-4 IPW65R019C7 vs IPZ65R019C7
IPW65R019C7FKSA1 Infineon Technologies AG $18.1620 Power Field-Effect Transistor, 75A I(D), 650V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 IPW65R019C7 vs IPW65R019C7FKSA1

IPW65R019C7 Related Parts

IPW65R019C7 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IPW65R019C7 is -40°C to 150°C.

  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to implement adequate cooling mechanisms, such as heat sinks or thermal interfaces.

  • The recommended gate resistor value for the IPW65R019C7 is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.

  • Yes, the IPW65R019C7 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout parasitics.

  • To protect the IPW65R019C7, it's recommended to implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits, such as TVS diodes and current sense resistors, to prevent damage from voltage and current surges.

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