Part Details for IPW65R048CFDAFKSA1 by Infineon Technologies AG
Results Overview of IPW65R048CFDAFKSA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPW65R048CFDAFKSA1 Information
IPW65R048CFDAFKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPW65R048CFDAFKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
13AC9098
|
Newark | Mosfet, N-Ch, Aec-Q101, 650V, To-247-3, Transistor Polarity:N Channel, Continuous Drain Current Id:63.3A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.043Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IPW65R048CFDAFKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 194 |
|
$6.8500 / $11.2100 | Buy Now |
|
DISTI #
IPW65R048CFDAFKSA1
|
Avnet Americas | Trans MOSFET N-CH 650V 63.3A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R048CFDAFKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
|
$5.2578 / $5.4361 | Buy Now |
|
DISTI #
C1S322000307197
|
Chip1Stop | Trans MOSFET N-CH 650V 63.3A Automotive 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant pbFree: Yes Container: Tube | 480 |
|
$8.8100 / $9.4200 | Buy Now |
|
DISTI #
SP000895318
|
EBV Elektronik | Trans MOSFET N-CH 650V 63.3A 3-Pin TO-247 Tube (Alt: SP000895318) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 18 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for IPW65R048CFDAFKSA1
IPW65R048CFDAFKSA1 CAD Models
IPW65R048CFDAFKSA1 Part Data Attributes
|
|
IPW65R048CFDAFKSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPW65R048CFDAFKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 63.3A I(D), 650V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 1943 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 63.3 A | |
| Drain-source On Resistance-Max | 0.048 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 228 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPW65R048CFDAFKSA1
This table gives cross-reference parts and alternative options found for IPW65R048CFDAFKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW65R048CFDAFKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| TK62J60W | Toshiba America Electronic Components | Check for Price | TRANSISTOR POWER, FET, FET General Purpose Power | IPW65R048CFDAFKSA1 vs TK62J60W |
| IRFPS59N60C | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 59A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN | IPW65R048CFDAFKSA1 vs IRFPS59N60C |
| APT60N60SCSG | Microchip Technology Inc | $22.2873 | Power Field-Effect Transistor, 60A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IPW65R048CFDAFKSA1 vs APT60N60SCSG |
| SIHG61N65EF-GE3 | Vishay Intertechnologies | $12.8702 | Power Field-Effect Transistor, 64A I(D), 650V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | IPW65R048CFDAFKSA1 vs SIHG61N65EF-GE3 |
| APT60N60BCSG | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 60A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN | IPW65R048CFDAFKSA1 vs APT60N60BCSG |
| NVHL040N65S3F | onsemi | $12.1823 | Single N-Channel Power MOSFET SUPERFET ® III, FRFET®, 650 V , 65 A, 40 mΩ, TO-247 TO−247, TO-247-3LD, 450-TUBE, Automotive Qualified | IPW65R048CFDAFKSA1 vs NVHL040N65S3F |
| IRFPS59N60C | International Rectifier | Check for Price | Power Field-Effect Transistor, 59A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN | IPW65R048CFDAFKSA1 vs IRFPS59N60C |
| APT60N60BCS | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 60A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | IPW65R048CFDAFKSA1 vs APT60N60BCS |
| STW65N65DM2AG | STMicroelectronics | $7.9324 | Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package | IPW65R048CFDAFKSA1 vs STW65N65DM2AG |
| IPW60R045CPAFKSA1 | Infineon Technologies AG | $22.8077 | Power Field-Effect Transistor, 60A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | IPW65R048CFDAFKSA1 vs IPW60R045CPAFKSA1 |