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Transistors / Power Field-Effect Transistors / IPW90R500C3XKSA1
Datasheets
IPW90R500C3XKSA1 by:

Power Field-Effect Transistor, 11A I(D), 900V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

Part Details for IPW90R500C3XKSA1 by Infineon Technologies AG

Overview of IPW90R500C3XKSA1 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IPW90R500C3XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 02AH6895
Newark Mosfet, N-Ch, 900V, 11A, 150Deg C, 156W, Transistor Polarity:N Channel, Continuous Drain Current Id:11A, Drain Source Voltage Vds:900V, On Resistance Rds(On):0.39Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IPW90R500C3XKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 229
  • 1 $4.4500
  • 10 $3.7400
  • 25 $3.5300
  • 50 $3.2800
  • 100 $3.0300
  • 480 $2.8600
  • 720 $2.6800
$2.6800 / $4.4500 Buy Now
DISTI # 448-IPW90R500C3XKSA1-ND
DigiKey MOSFET N-CH 900V 11A TO247-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube 931
In Stock
  • 1 $4.2900
  • 30 $3.3993
  • 120 $2.9137
  • 510 $2.5900
  • 1,020 $2.2177
  • 2,010 $2.0882
$2.0882 / $4.2900 Buy Now
DISTI # IPW90R500C3XKSA1
Avnet Americas Trans MOSFET N-CH 900V 11A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW90R500C3XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Container: Tube 0
  • 240 $2.5339
  • 300 $2.4593
  • 540 $2.3848
  • 1,200 $2.3103
  • 2,400 $2.2357
  • 12,000 $2.1612
  • 24,000 $2.0867
$2.0867 / $2.5339 Buy Now
DISTI # 726-IPW90R500C3XKSA1
Mouser Electronics MOSFET LOW POWER_LEGACY RoHS: Compliant 478
  • 1 $4.2900
  • 10 $4.1800
  • 25 $3.4000
  • 100 $2.9100
  • 240 $2.8800
  • 480 $2.2100
  • 1,200 $2.0800
$2.0800 / $4.2900 Buy Now
Future Electronics Trans MOSFET N-CH 900V 11A 3-Pin TO-247 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube 2160
Tube
  • 30 $2.2700
  • 120 $2.2000
  • 300 $2.1500
  • 750 $2.1100
  • 1,200 $2.0400
$2.0400 / $2.2700 Buy Now
Future Electronics Trans MOSFET N-CH 900V 11A 3-Pin TO-247 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $2.2700
  • 120 $2.2000
  • 300 $2.1500
  • 750 $2.1100
  • 1,200 $2.0400
$2.0400 / $2.2700 Buy Now
DISTI # IPW90R500C3XKSA1
Avnet Americas Trans MOSFET N-CH 900V 11A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW90R500C3XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Container: Tube 0
  • 240 $2.5339
  • 300 $2.4593
  • 540 $2.3848
  • 1,200 $2.3103
  • 2,400 $2.2357
  • 12,000 $2.1612
  • 24,000 $2.0867
$2.0867 / $2.5339 Buy Now
DISTI # SP002548900
EBV Elektronik Trans MOSFET N-CH 900V 11A 3-Pin TO-247 Tube (Alt: SP002548900) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 2 Weeks, 2 Days EBV - 0
Buy Now

Part Details for IPW90R500C3XKSA1

IPW90R500C3XKSA1 CAD Models

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IPW90R500C3XKSA1 Part Data Attributes:

Parametric Data
IPW90R500C3XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPW90R500C3XKSA1 Infineon Technologies AG Power Field-Effect Transistor, 11A I(D), 900V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 388 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 156 W
Pulsed Drain Current-Max (IDM) 24 A
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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