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Power Field-Effect Transistor, 22A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 4 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IPZ60R099C7XKSA1-ND
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DigiKey | MOSFET N-CH 600V 22A TO247-4 Min Qty: 1 Lead time: 17 Weeks Container: Bulk MARKETPLACE PRODUCT |
14361 In Stock |
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$3.8300 | Buy Now |
DISTI #
IPZ60R099C7XKSA1-ND
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DigiKey | MOSFET N-CH 600V 22A TO247-4 Min Qty: 1 Lead time: 17 Weeks Container: Tube | Temporarily Out of Stock |
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$3.3818 / $6.3600 | Buy Now |
DISTI #
IPZ60R099C7XKSA1
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Avnet Americas | Power MOSFET, N Channel, 600 V, 22 A, 99 Milliohms, TO-247, 4 Pins, Through Hole - Rail/Tube (Alt: IPZ60R099C7XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
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$4.1027 | Buy Now |
DISTI #
726-IPZ60R099C7XKSA1
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Mouser Electronics | MOSFET HIGH POWER_NEW RoHS: Compliant | 203 |
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$3.3800 / $6.3700 | Buy Now |
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Future Electronics | CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube | 0Tube |
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$3.7600 / $4.1400 | Buy Now |
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Future Electronics | CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube | 0Tube |
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$3.7600 / $4.1400 | Buy Now |
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Rochester Electronics | IPZ60R099 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 14361 |
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$3.2800 / $3.8600 | Buy Now |
DISTI #
IPZ60R099C7XKSA1
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Avnet Americas | Power MOSFET, N Channel, 600 V, 22 A, 99 Milliohms, TO-247, 4 Pins, Through Hole - Rail/Tube (Alt: IPZ60R099C7XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
|
$4.1027 | Buy Now |
DISTI #
IPZ60R099C7XKSA1
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Avnet Americas | Power MOSFET, N Channel, 600 V, 22 A, 99 Milliohms, TO-247, 4 Pins, Through Hole - Rail/Tube (Alt: IPZ60R099C7XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
|
$4.1027 | Buy Now |
DISTI #
SP001298006
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EBV Elektronik | Power MOSFET, N Channel, 600 V, 22 A, 99 Milliohms, TO-247, 4 Pins, Through Hole (Alt: SP001298006) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 2 Weeks, 4 Days | EBV - 0 |
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Buy Now |
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IPZ60R099C7XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPZ60R099C7XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 22A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 4 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TO-247, 4 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 97 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 22 A | |
Drain-source On Resistance-Max | 0.099 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T4 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 83 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPZ60R099C7XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPZ60R099C7XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXKC23N60C5 | Power Field-Effect Transistor, 23A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS220, 3 PIN | IXYS Corporation | IPZ60R099C7XKSA1 vs IXKC23N60C5 |
IPZ60R099C7 | Power Field-Effect Transistor, 22A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 4 PIN | Infineon Technologies AG | IPZ60R099C7XKSA1 vs IPZ60R099C7 |
IXKC23N60C5 | Power Field-Effect Transistor, | Littelfuse Inc | IPZ60R099C7XKSA1 vs IXKC23N60C5 |