Part Details for IRF1010ZSPBF by Infineon Technologies AG
Overview of IRF1010ZSPBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Price & Stock for IRF1010ZSPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
IRF1010ZSPBF-ND
|
DigiKey | MOSFET N-CH 55V 75A D2PAK Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
|
Buy Now | |
|
DISTI #
8657351
|
element14 Asia-Pacific | MOSFET, N, 55V, 94A, D2-PAK RoHS: Compliant Min Qty: 1 Container: Each | 0 |
|
$0.9300 / $1.1662 | Buy Now |
|
DISTI #
8657351
|
Farnell | MOSFET, N, 55V, 94A, D2-PAK RoHS: Compliant Min Qty: 1 Lead time: 10 Weeks, 1 Days Container: Each | 0 |
|
$0.7727 / $1.2524 | Buy Now |
Part Details for IRF1010ZSPBF
IRF1010ZSPBF CAD Models
IRF1010ZSPBF Part Data Attributes:
|
|
IRF1010ZSPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRF1010ZSPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF1010ZSPBF
This table gives cross-reference parts and alternative options found for IRF1010ZSPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1010ZSPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF1010ZSTRR | Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRF1010ZSPBF vs IRF1010ZSTRR |
| IRF1010ZSTRRPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF1010ZSPBF vs IRF1010ZSTRRPBF |
| IRF1010ZSPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF1010ZSPBF vs IRF1010ZSPBF |
| IRF1010ZSTRLPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF1010ZSPBF vs IRF1010ZSTRLPBF |
| IRF1010ZSTRRPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF1010ZSPBF vs IRF1010ZSTRRPBF |
| IRF1010ZSTRL | Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRF1010ZSPBF vs IRF1010ZSTRL |