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Transistors / Power Field-Effect Transistors / IRF1404PBF
Datasheets
IRF1404PBF by:

Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRF1404PBF by Infineon Technologies AG

Results Overview of IRF1404PBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRF1404PBF Information

IRF1404PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF1404PBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7187
Newark N Channel Mosfet, 202A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:202A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF1404PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 11387
  • 1 $1.3000
  • 25 $1.3000
  • 100 $1.2000
  • 500 $1.1000
  • 1,000 $0.9530
  • 2,500 $0.9080
  • 5,000 $0.8580
  • 10,000 $0.8440
$0.8440 / $1.3000 Buy Now
DISTI # IRF1404PBF
Avnet Americas Trans MOSFET N-CH 40V 202A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1404PBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tube 400
  • 50 $0.7161
  • 60 $0.7102
  • 110 $0.7043
  • 250 $0.6985
  • 500 $0.6925
$0.6925 / $0.7161 Buy Now
DISTI # 63J7187
Avnet Americas Trans MOSFET N-CH 40V 202A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7187) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 5 Days Container: Bulk 1197 Partner Stock
  • 1 $2.4000
  • 25 $2.0600
  • 100 $1.5900
  • 500 $1.3700
  • 1,000 $0.9730
$0.9730 / $2.4000 Buy Now
DISTI # 70017208
RS MOSFET, Power, N-Ch, VDSS 40V, RDS(ON) 0.0035Ohm, ID 202A, TO-220AB, PD 333W, VGS+/-20V | Infineon IRF1404PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $1.8400
  • 10 $1.7500
  • 50 $1.6500
  • 100 $1.5600
$1.5600 / $1.8400 RFQ
Rochester Electronics IRF1404 - MOSFET N-Channel Single 40V 202A RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 114326
  • 1 $0.9783
  • 25 $0.9587
  • 100 $0.9196
  • 500 $0.8805
  • 1,000 $0.8316
$0.8316 / $0.9783 Buy Now
DISTI # IRF1404PBF
TME Transistor: N-MOSFET, unipolar, 40V, 162A, 200W, TO220AB Min Qty: 1 84
  • 1 $1.3600
  • 10 $1.1100
  • 50 $0.9800
  • 100 $0.9400
  • 500 $0.9300
$0.9300 / $1.3600 Buy Now
DISTI # C1S327400157294
Chip One Stop Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Container: Tube 2559
  • 1 $0.5210
$0.5210 Buy Now
DISTI # C1S322000841716
Chip One Stop MOSFET RoHS: Compliant Container: Tube 85
  • 1 $0.3520
$0.3520 Buy Now
DISTI # SP001561374
EBV Elektronik Trans MOSFET N-CH 40V 202A 3-Pin(3+Tab) TO-220AB (Alt: SP001561374) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now
LCSC 40V 202A 333W 0.00410V121A 4V 1 N-channel TO-220AB MOSFETs ROHS 7
  • 1 $0.9624
  • 10 $0.7819
  • 50 $0.6381
  • 100 $0.5478
  • 500 $0.4943
  • 1,000 $0.4667
$0.4667 / $0.9624 Buy Now
Win Source Electronics MOSFET N-CH 40V 202A TO-220AB 200
  • 50 $1.0738
  • 115 $0.8811
  • 180 $0.8536
  • 245 $0.8260
  • 315 $0.7985
  • 420 $0.7159
$0.7159 / $1.0738 Buy Now

Part Details for IRF1404PBF

IRF1404PBF CAD Models

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IRF1404PBF Part Data Attributes

Parametric Data
IRF1404PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF1404PBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks, 5 Days
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 620 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.004 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 333 W
Pulsed Drain Current-Max (IDM) 808 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF1404PBF

This table gives cross-reference parts and alternative options found for IRF1404PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1404PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF1404PBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 IRF1404PBF vs IRF1404PBF
IRF1404 International Rectifier Check for Price Power Field-Effect Transistor, 202A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF1404PBF vs IRF1404
Part Number Manufacturer Composite Price Description Compare
AUIRF1404ZL Infineon Technologies AG Check for Price Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN IRF1404PBF vs AUIRF1404ZL
IRF1404 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 202A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF1404PBF vs IRF1404
AUIRF1404Z Infineon Technologies AG Check for Price Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 IRF1404PBF vs AUIRF1404Z
IRF1404Z International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 IRF1404PBF vs IRF1404Z

IRF1404PBF Related Parts

IRF1404PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF1404PBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.

  • The recommended gate drive voltage for the IRF1404PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRF1404PBF is suitable for high-frequency switching applications, but ensure that the device is operated within its specified switching frequency and duty cycle ratings.

  • Handle the device with ESD-protective equipment, and ensure that the device is stored in an ESD-protective package or bag when not in use.

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