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Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7191
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Newark | N Channel Mosfet, 40V, 190A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:190A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF1404ZPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 398 |
|
$0.9400 / $1.5400 | Buy Now |
DISTI #
IRF1404ZPBF-ND
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DigiKey | MOSFET N-CH 40V 180A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
3077 In Stock |
|
$0.7516 / $1.7900 | Buy Now |
DISTI #
IRF1404ZPBF
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Avnet Americas | Trans MOSFET N-CH 40V 190A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1404ZPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.6765 / $0.8268 | Buy Now |
DISTI #
63J7191
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Avnet Americas | Trans MOSFET N-CH 40V 190A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7191) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 5 Days Container: Bulk | 25 Partner Stock |
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$0.9760 / $1.5600 | Buy Now |
DISTI #
942-IRF1404ZPBF
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Mouser Electronics | MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg RoHS: Compliant | 10277 |
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$0.7330 / $1.3500 | Buy Now |
DISTI #
70016941
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RS | MOSFET, Power, N-Ch, VDSS 40V, RDS(ON) 2.7 Milliohms, ID 190A, TO-220AB, PD 220W,-55C | Infineon IRF1404ZPBF RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Container: Bulk | 0 |
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$1.4700 / $1.7400 | RFQ |
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Future Electronics | Single N-Channel 40 V 3.7 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 40850Tube |
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$0.4750 / $0.5600 | Buy Now |
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Future Electronics | Single N-Channel 40 V 3.7 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.7200 / $0.8550 | Buy Now |
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Rochester Electronics | IRF1404 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 10791 |
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$0.7454 / $0.8769 | Buy Now |
DISTI #
IRF1404ZPBF
|
Avnet Americas | Trans MOSFET N-CH 40V 190A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1404ZPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$0.6765 / $0.8268 | Buy Now |
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IRF1404ZPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRF1404ZPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks, 5 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 480 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.0037 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 220 W | |
Pulsed Drain Current-Max (IDM) | 750 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF1404ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1404ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
AUIRF1404Z | Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | IRF1404ZPBF vs AUIRF1404Z |
IRF1404ZPBF | Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | International Rectifier | IRF1404ZPBF vs IRF1404ZPBF |