Datasheets
IRF1503PBF by:

Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRF1503PBF by Infineon Technologies AG

Overview of IRF1503PBF by Infineon Technologies AG

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Applications Automotive

Price & Stock for IRF1503PBF

Part # Distributor Description Stock Price Buy
Chip1Cloud AUTOMOTIVE MOSFET | MOSFET N-CH 30V 75A TO-220AB 7000
RFQ
DISTI # 8657440
element14 Asia-Pacific MOSFET, N, 30V, 240A, TO-220 RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $3.3989
  • 10 $2.8004
  • 100 $2.3201
  • 500 $2.0984
  • 1,000 $1.8989
$1.8989 / $3.3989 Buy Now
DISTI # 8657440
Farnell MOSFET, N, 30V, 240A, TO-220 RoHS: Compliant Min Qty: 1 Lead time: 12 Weeks, 1 Days Container: Each 0
  • 1 $2.7092
  • 25 $2.1824
  • 100 $1.6807
  • 250 $1.5929
  • 1,000 $1.5553
$1.5553 / $2.7092 Buy Now

Part Details for IRF1503PBF

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IRF1503PBF Part Data Attributes:

IRF1503PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF1503PBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 980 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 330 W
Pulsed Drain Current-Max (IDM) 960 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF1503PBF

This table gives cross-reference parts and alternative options found for IRF1503PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1503PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF1503 Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF1503PBF vs IRF1503
Part Number Description Manufacturer Compare
IRF1503 Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF1503PBF vs IRF1503

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