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Transistors / Power Field-Effect Transistors / IRF2807PBF
Datasheets
IRF2807PBF by:

Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRF2807PBF by Infineon Technologies AG

Results Overview of IRF2807PBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRF2807PBF Information

IRF2807PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF2807PBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7221
Newark N Channel Mosfet, 75V, 82A To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:75V, Continuous Drain Current Id:82A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF2807PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 599
  • 1 $2.0300
  • 10 $1.3000
  • 100 $1.1600
  • 500 $0.9990
  • 1,000 $0.9380
  • 3,000 $0.9290
$0.9290 / $2.0300 Buy Now
DISTI # IRF2807PBF
Avnet Americas Trans MOSFET N-CH 80V 82A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF2807PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tube 0
RFQ
Rochester Electronics IRF2807 - N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 10447
  • 1 $0.8540
  • 25 $0.8369
  • 100 $0.8028
  • 500 $0.7686
  • 1,000 $0.7259
$0.7259 / $0.8540 Buy Now
DISTI # IRF2807PBF
TME Transistor: N-MOSFET, unipolar, 75V, 82A, 200W, TO220AB Min Qty: 1 148
  • 1 $1.6800
  • 10 $1.3700
  • 50 $1.0000
  • 100 $0.9200
  • 250 $0.8600
  • 500 $0.7600
  • 1,000 $0.7000
$0.7000 / $1.6800 Buy Now
Chip 1 Exchange INSTOCK 1300
RFQ
DISTI # C1S327400157391
Chip1Stop Trans MOSFET N-CH Si 80V 82A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Container: Tube 1000
  • 1 $0.5650
  • 10 $0.5640
  • 50 $0.5610
  • 100 $0.5600
  • 200 $0.5580
  • 500 $0.5570
  • 1,000 $0.5560
$0.5560 / $0.5650 Buy Now
DISTI # C1S322000479643
Chip1Stop Trans MOSFET N-CH Si 80V 82A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Container: Tube 25
  • 1 $0.4340
  • 10 $0.4330
$0.4330 / $0.4340 Buy Now
DISTI # C1S322000479634
Chip1Stop Trans MOSFET N-CH Si 80V 82A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Container: Tube 10
  • 1 $0.4340
  • 10 $0.4330
$0.4330 / $0.4340 Buy Now
CHIPMALL.COM LIMITED 75V 82A 13m@10V,43A 230W 4V@250uA 1 N-Channel TO-220AB MOSFETs ROHS 545
  • 1 $0.6876
  • 10 $0.5686
  • 50 $0.4614
  • 100 $0.4034
  • 500 $0.3677
  • 1,000 $0.3498
$0.3498 / $0.6876 Buy Now
DISTI # SP001550978
EBV Elektronik Trans MOSFET N-CH 80V 82A 3-Pin(3+Tab) TO-220AB (Alt: SP001550978) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now
LCSC 75V 82A 13m10V43A 230W 4V250uA 1 N-channel TO-220AB MOSFETs ROHS 512
  • 1 $0.6667
  • 10 $0.5520
  • 50 $0.4481
  • 100 $0.3907
  • 500 $0.3566
  • 1,000 $0.3396
$0.3396 / $0.6667 Buy Now

Part Details for IRF2807PBF

IRF2807PBF CAD Models

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IRF2807PBF Part Data Attributes

Parametric Data
IRF2807PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF2807PBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 340 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.013 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 230 W
Pulsed Drain Current-Max (IDM) 280 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF2807PBF

This table gives cross-reference parts and alternative options found for IRF2807PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF2807PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
AUIRF2807 Infineon Technologies AG $0.3787 Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 IRF2807PBF vs AUIRF2807
IRF2807 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 82A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF2807PBF vs IRF2807
Part Number Manufacturer Composite Price Description Compare
IRF511 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRF2807PBF vs IRF511
IRF513 Motorola Mobility LLC Check for Price 3.5A, 60V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF2807PBF vs IRF513
SUM110N08-07-E3 Vishay Siliconix Check for Price Power Field-Effect Transistor, 110A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN IRF2807PBF vs SUM110N08-07-E3
IRF513-009 International Rectifier Check for Price Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF2807PBF vs IRF513-009
SUP90N08-4M8P-E3 Vishay Siliconix Check for Price TRANSISTOR 90 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, 3 PIN, FET General Purpose Power IRF2807PBF vs SUP90N08-4M8P-E3
IRF540N Infineon Technologies AG Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF2807PBF vs IRF540N
IRF511 Harris Semiconductor Check for Price Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF2807PBF vs IRF511
SUP90N08-8M2P-E3 Vishay Siliconix Check for Price TRANSISTOR 90 A, 75 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power IRF2807PBF vs SUP90N08-8M2P-E3
IRFZ48V Infineon Technologies AG Check for Price Power Field-Effect Transistor, 72A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF2807PBF vs IRFZ48V
IRF540NPBF International Rectifier Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 IRF2807PBF vs IRF540NPBF

IRF2807PBF Related Parts

IRF2807PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF2807PBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.

  • The recommended gate resistor value for the IRF2807PBF is typically between 10Ω to 100Ω, depending on the specific application and switching frequency.

  • Yes, the IRF2807PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and thermal management to minimize losses and ensure reliability.

  • Use a suitable voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit to prevent damage to the device.

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