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Part Details for IRF300P226 by Infineon Technologies AG
Overview of IRF300P226 by Infineon Technologies AG
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF300P226
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
93AC7145
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Newark | Mosfet, N-Ch, 300V, 100A, To-247Ac, Channel Type:N Channel, Drain Source Voltage Vds:300V, Continuous Drain Current Id:100A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF300P226 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 792 |
|
$6.6000 / $10.9000 | Buy Now |
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DISTI #
38AH8488
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Newark | Trench >=100V Rohs Compliant: Yes |Infineon IRF300P226 Min Qty: 25 Package Multiple: 1 Date Code: 0 Container: Bulk | 400 |
|
$6.1400 | Buy Now |
|
DISTI #
448-IRF300P226-ND
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DigiKey | MOSFET N-CH 300V 100A TO247AC Min Qty: 1 Lead time: 20 Weeks Container: Tube |
1293 In Stock |
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$5.3988 / $9.5200 | Buy Now |
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DISTI #
IRF300P226
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Avnet Americas | Transistor MOSFET N-CH 300V 100A 2-Pin TO-247AC Tube - Rail/Tube (Alt: IRF300P226) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tube | 400 |
|
$6.1372 | Buy Now |
|
DISTI #
93AC7145
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Avnet Americas | Transistor MOSFET N-CH 300V 100A 2-Pin TO-247AC Tube - Bulk (Alt: 93AC7145) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 234 Partner Stock |
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$8.0900 / $10.9100 | Buy Now |
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DISTI #
726-IRF300P226
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Mouser Electronics | MOSFET IFX OPTIMOS RoHS: Compliant | 417 |
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$5.3900 / $9.5200 | Buy Now |
|
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Future Electronics | 300V 75A 19 mOhm N-ch TO-247 RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 25 Container: Tube | 0Tube |
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$5.2900 | Buy Now |
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Future Electronics | 300V 75A 19 mOhm N-ch TO-247 RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 25 Container: Tube | 0Tube |
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$5.2900 | Buy Now |
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DISTI #
IRF300P226
|
Avnet Americas | Transistor MOSFET N-CH 300V 100A 2-Pin TO-247AC Tube - Rail/Tube (Alt: IRF300P226) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tube | 400 |
|
$6.1372 | Buy Now |
|
DISTI #
93AC7145
|
Avnet Americas | Transistor MOSFET N-CH 300V 100A 2-Pin TO-247AC Tube - Bulk (Alt: 93AC7145) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 234 Partner Stock |
|
$8.0900 / $10.9100 | Buy Now |
Part Details for IRF300P226
IRF300P226 CAD Models
IRF300P226 Part Data Attributes:
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IRF300P226
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF300P226
Infineon Technologies AG
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 1559 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 300 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.019 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3.8 pF | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 556 W | |
| Pulsed Drain Current-Max (IDM) | 375 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |