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Part Details for IRF3205PBF by Infineon Technologies AG
Results Overview of IRF3205PBF by Infineon Technologies AG
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRF3205PBF Information
IRF3205PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF3205PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
63J7236
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Newark | N Channel Mosfet, 55V, 110A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:110A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF3205PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 89410 |
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$0.5240 / $0.6190 | Buy Now |
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DISTI #
63J7236
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Avnet Americas | Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7236) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 46840 Partner Stock |
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$0.6730 / $1.8400 | Buy Now |
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DISTI #
IRF3205PBF
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Avnet Americas | Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF3205PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
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$0.4375 / $0.4680 | Buy Now |
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DISTI #
70016950
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 8 Milliohms, ID 110A, TO-220AB, PD 200W, gFS 44S Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$1.9700 / $2.6400 | RFQ |
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Rochester Electronics | IRF3205 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 40873 |
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$0.4814 / $0.7765 | Buy Now |
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Future Electronics | Single N-Channel 55 V 8 mOhm 146 nC HEXFET� Power Mosfet - TO-220-3 Min Qty: 50 Package Multiple: 50 |
3450 null |
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$0.4650 / $0.5200 | Buy Now |
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Future Electronics | Single N-Channel 55 V 8 mOhm 146 nC HEXFET� Power Mosfet - TO-220-3 Min Qty: 50 Package Multiple: 50 |
15200 null |
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$0.3050 / $0.3400 | Buy Now |
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DISTI #
IRF3205PBF
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TME | Transistor: N-MOSFET, unipolar, 55V, 80A, 200W, TO220AB Min Qty: 1 | 1208 |
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$0.3880 / $1.0770 | Buy Now |
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DISTI #
IRF3205PBF
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IBS Electronics | MOSFET POWER N-CH VDSS 55V RDS(ON) 8 MILLIOHMS ID 110A TO-220AB PD 200W GFS 44S Min Qty: 50 Package Multiple: 1 | 6000 |
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$0.3835 / $0.4225 | Buy Now |
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DISTI #
TMOSP11748
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Rutronik | N-CH 55V 98A 8mOhm TO220-3 RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube |
Stock DE - 950 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.3826 / $0.4960 | Buy Now |
Part Details for IRF3205PBF
IRF3205PBF CAD Models
IRF3205PBF Part Data Attributes
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IRF3205PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF3205PBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 264 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.008 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Pulsed Drain Current-Max (IDM) | 390 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF3205PBF
This table gives cross-reference parts and alternative options found for IRF3205PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3205PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF3205VPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | IRF3205PBF vs IRF3205VPBF |
| HUF75344P3 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF3205PBF vs HUF75344P3 |
| HUF75344P3_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF3205PBF vs HUF75344P3_NL |
| IRF3205PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | IRF3205PBF vs IRF3205PBF |
| IRF3205 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF3205PBF vs IRF3205 |
| IRF3205VPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | IRF3205PBF vs IRF3205VPBF |
| IRF3205HR | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF3205PBF vs IRF3205HR |
| AUIRF3205 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRF3205PBF vs AUIRF3205 |
IRF3205PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF3205PBF is -55°C to 175°C.
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To ensure proper cooling, ensure a good thermal interface between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1°C/W.
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The recommended gate drive voltage for the IRF3205PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Use a voltage clamp or a zener diode to protect the device from overvoltage, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
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The maximum allowable power dissipation for the IRF3205PBF is 130W, but this can be increased with proper heat sinking and cooling.