-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
42Y0386
|
Newark | Mosfet Transistor, N Channel, 110 A, 55 V, 0.008 Ohm, 10 V, 4 V Rohs Compliant: Yes |Infineon IRF3205STRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1985 |
|
$1.3000 / $1.9100 | Buy Now |
DISTI #
86AK5350
|
Newark | Mosfet, N-Ch, 55V, 110A, To-263 Rohs Compliant: Yes |Infineon IRF3205STRLPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.8890 / $1.0400 | Buy Now |
DISTI #
IRF3205STRLPBF
|
Avnet Americas | Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3205STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
DISTI #
IRF3205STRLPBF
|
Avnet Americas | Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3205STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
DISTI #
70017659
|
RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 8 Milliohms, ID 110A, D2Pak, PD 200W, VGS +/-20V | Infineon IRF3205STRLPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
|
$1.4200 / $1.6800 | RFQ |
|
Bristol Electronics | 15689 |
|
RFQ | ||
|
Rochester Electronics | IRF3205 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | Call for Availability |
|
$0.6889 / $0.8105 | Buy Now |
DISTI #
IRF3205STRLPBF
|
TME | Transistor: N-MOSFET, unipolar, 55V, 110A, 200W, D2PAK Min Qty: 1 | 1054 |
|
$0.7000 / $1.6700 | Buy Now |
|
ComSIT USA | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant |
|
|
RFQ | |
|
CHIPMALL.COM LIMITED | MOSFET N-CH 55V 110A D2PAK | 6608 |
|
$0.3925 / $0.8063 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRF3205STRLPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRF3205STRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | D2PAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 264 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.008 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 211 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Pulsed Drain Current-Max (IDM) | 390 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 115 ns | |
Turn-on Time-Max (ton) | 115 ns |