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Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF3205STRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
42Y0386
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Newark | Mosfet Transistor, N Channel, 110 A, 55 V, 0.008 Ohm, 10 V, 4 V Rohs Compliant: Yes |Infineon IRF3205STRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 335 |
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$0.9430 / $1.9000 | Buy Now |
DISTI #
86AK5350
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Newark | Mosfet, N-Ch, 55V, 110A, To-263 Rohs Compliant: Yes |Infineon IRF3205STRLPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.8300 / $0.8470 | Buy Now |
DISTI #
42Y0386
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Avnet Americas | Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R (Alt: 42Y0386) RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 335 Partner Stock |
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RFQ | |
DISTI #
IRF3205STRLPBF
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Avnet Americas | Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3205STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
IRF3205STRLPBF
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Avnet Americas | Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3205STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.5628 / $0.5813 | Buy Now |
DISTI #
70017659
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 8 Milliohms, ID 110A, D2Pak, PD 200W, VGS +/-20V | Infineon IRF3205STRLPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$1.4400 / $1.7000 | RFQ |
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Bristol Electronics | 15689 |
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RFQ | ||
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Rochester Electronics | IRF3205 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | Call for Availability |
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$0.6561 / $0.7719 | Buy Now |
DISTI #
IRF3205STRLPBF
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TME | Transistor: N-MOSFET, unipolar, 55V, 110A, 200W, D2PAK Min Qty: 1 | 594 |
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$0.6500 / $1.6300 | Buy Now |
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ComSIT USA | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant |
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RFQ |
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IRF3205STRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF3205STRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | D2PAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 264 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.008 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 211 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Pulsed Drain Current-Max (IDM) | 390 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 115 ns | |
Turn-on Time-Max (ton) | 115 ns |
This table gives cross-reference parts and alternative options found for IRF3205STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3205STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRF3205STRLPBF | International Rectifier | $0.5960 | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF3205STRLPBF vs IRF3205STRLPBF |
IRF3205STRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | IRF3205STRLPBF vs IRF3205STRL |
IRF3205SPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | IRF3205STRLPBF vs IRF3205SPBF |
IRF3205S | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | IRF3205STRLPBF vs IRF3205S |
IRF3205STRRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF3205STRLPBF vs IRF3205STRRPBF |