Datasheets
IRF3205STRLPBF by:

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRF3205STRLPBF by Infineon Technologies AG

Overview of IRF3205STRLPBF by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF3205STRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 42Y0386
Newark Mosfet Transistor, N Channel, 110 A, 55 V, 0.008 Ohm, 10 V, 4 V Rohs Compliant: Yes |Infineon IRF3205STRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 1985
  • 1 $1.9100
  • 10 $1.6100
  • 25 $1.5000
  • 50 $1.4000
  • 100 $1.3000
$1.3000 / $1.9100 Buy Now
DISTI # 86AK5350
Newark Mosfet, N-Ch, 55V, 110A, To-263 Rohs Compliant: Yes |Infineon IRF3205STRLPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 800 $1.0400
  • 1,600 $0.9630
  • 3,200 $0.9210
  • 4,800 $0.9050
  • 8,000 $0.8890
$0.8890 / $1.0400 Buy Now
DISTI # IRF3205STRLPBF
Avnet Americas Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3205STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # IRF3205STRLPBF
Avnet Americas Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3205STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 70017659
RS MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 8 Milliohms, ID 110A, D2Pak, PD 200W, VGS +/-20V | Infineon IRF3205STRLPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk 0
  • 10 $1.6800
  • 100 $1.5900
  • 500 $1.5100
  • 1,000 $1.4200
$1.4200 / $1.6800 RFQ
Bristol Electronics   15689
RFQ
Rochester Electronics IRF3205 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 Call for Availability
  • 1 $0.8105
  • 25 $0.7943
  • 100 $0.7619
  • 500 $0.7294
  • 1,000 $0.6889
$0.6889 / $0.8105 Buy Now
DISTI # IRF3205STRLPBF
TME Transistor: N-MOSFET, unipolar, 55V, 110A, 200W, D2PAK Min Qty: 1 1054
  • 1 $1.6700
  • 10 $0.9900
  • 50 $0.8800
  • 100 $0.8400
  • 250 $0.7700
  • 800 $0.7000
$0.7000 / $1.6700 Buy Now
ComSIT USA Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant Stock EU - 1380
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
CHIPMALL.COM LIMITED MOSFET N-CH 55V 110A D2PAK 6608
  • 1 $0.8063
  • 10 $0.6730
  • 100 $0.5411
  • 800 $0.3925
$0.3925 / $0.8063 Buy Now
CHIPMALL.COM LIMITED The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS , lighting , load switches as well as battery powered applications. 350
  • 1 $0.5217
$0.5217 Buy Now
DISTI # SP001576758
EBV Elektronik Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001576758) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 11 Weeks, 0 Days EBV - 4800
Buy Now
LCSC 55V 110A 8m10V62A 200W 4V250uA 1 N-Channel D2PAK MOSFETs ROHS 6095
  • 1 $0.8399
  • 10 $0.7010
  • 30 $0.6315
  • 100 $0.5636
  • 500 $0.4310
  • 800 $0.4089
$0.4089 / $0.8399 Buy Now
New Advantage Corporation Single N-Channel 55V 8 mOhm 146 nC HEXFET� Power Mosfet - D2PAK RoHS: Compliant Min Qty: 1 Package Multiple: 800 63200
  • 800 $0.8071
  • 63,200 $0.7533
$0.7533 / $0.8071 Buy Now
Win Source Electronics MOSFET N-CH 55V 110A D2PAK 78273
  • 85 $0.5960
  • 205 $0.4890
  • 320 $0.4740
  • 440 $0.4590
  • 565 $0.4440
  • 755 $0.3980
$0.3980 / $0.5960 Buy Now

Part Details for IRF3205STRLPBF

IRF3205STRLPBF CAD Models

IRF3205STRLPBF Part Data Attributes

IRF3205STRLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF3205STRLPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description D2PAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 10 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 264 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 211 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 390 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 115 ns
Turn-on Time-Max (ton) 115 ns

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