Datasheets
IRF3205STRLPBF by:

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRF3205STRLPBF by Infineon Technologies AG

Results Overview of IRF3205STRLPBF by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRF3205STRLPBF Information

IRF3205STRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF3205STRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 42Y0386
Newark Mosfet Transistor, N Channel, 110 A, 55 V, 0.008 Ohm, 10 V, 4 V Rohs Compliant: Yes |Infineon IRF3205STRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 335
  • 1 $1.9000
  • 10 $1.6000
  • 25 $1.5000
  • 50 $1.4000
  • 100 $1.3000
  • 250 $1.1900
  • 500 $1.0600
  • 1,600 $0.9430
$0.9430 / $1.9000 Buy Now
DISTI # 86AK5350
Newark Mosfet, N-Ch, 55V, 110A, To-263 Rohs Compliant: Yes |Infineon IRF3205STRLPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 800 $0.8470
  • 1,600 $0.8300
$0.8300 / $0.8470 Buy Now
DISTI # 42Y0386
Avnet Americas Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R (Alt: 42Y0386) RoHS: Compliant Min Qty: 1 Package Multiple: 1 335 Partner Stock
RFQ
DISTI # IRF3205STRLPBF
Avnet Americas Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3205STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # IRF3205STRLPBF
Avnet Americas Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3205STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 800 $0.5813
  • 1,600 $0.5767
  • 3,200 $0.5720
  • 4,800 $0.5674
  • 6,400 $0.5628
$0.5628 / $0.5813 Buy Now
DISTI # 70017659
RS MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 8 Milliohms, ID 110A, D2Pak, PD 200W, VGS +/-20V | Infineon IRF3205STRLPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk 0
  • 10 $1.7000
  • 100 $1.6100
  • 500 $1.5300
  • 1,000 $1.4400
$1.4400 / $1.7000 RFQ
Bristol Electronics   15689
RFQ
Rochester Electronics IRF3205 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 Call for Availability
  • 1 $0.7719
  • 25 $0.7565
  • 100 $0.7256
  • 500 $0.6947
  • 1,000 $0.6561
$0.6561 / $0.7719 Buy Now
DISTI # IRF3205STRLPBF
TME Transistor: N-MOSFET, unipolar, 55V, 110A, 200W, D2PAK Min Qty: 1 594
  • 1 $1.6300
  • 10 $1.1700
  • 50 $1.0200
  • 100 $0.8300
  • 250 $0.7900
  • 500 $0.7300
  • 800 $0.6500
$0.6500 / $1.6300 Buy Now
ComSIT USA Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant Stock DE - 1380
Stock ES - 303
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
CHIPMALL.COM LIMITED 55V 110A 8m@10V,62A 200W 2V@250uA 1 N-Channel D2PAK MOSFETs ROHS 4247
  • 1 $0.4519
  • 10 $0.4166
  • 30 $0.4095
  • 100 $0.3883
$0.3883 / $0.4519 Buy Now
DISTI # SP001576758
EBV Elektronik Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001576758) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 11 Weeks, 0 Days EBV - 0
Buy Now
LCSC 55V 110A 8m10V62A 200W 2V250uA 1 N-channel D2PAK MOSFETs ROHS 4597
  • 1 $0.7799
  • 10 $0.6527
  • 30 $0.5892
  • 100 $0.5272
  • 500 $0.4062
  • 800 $0.3876
$0.3876 / $0.7799 Buy Now
Win Source Electronics MOSFET N-CH 55V 110A D2PAK 30000
  • 110 $0.4584
  • 235 $0.4289
  • 365 $0.4141
  • 525 $0.3845
  • 680 $0.3697
  • 850 $0.3549
$0.3549 / $0.4584 Buy Now

Part Details for IRF3205STRLPBF

IRF3205STRLPBF CAD Models

IRF3205STRLPBF Part Data Attributes

IRF3205STRLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF3205STRLPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description D2PAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 264 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 211 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 390 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 115 ns
Turn-on Time-Max (ton) 115 ns

Alternate Parts for IRF3205STRLPBF

This table gives cross-reference parts and alternative options found for IRF3205STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3205STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF3205STRLPBF International Rectifier $0.5960 Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF3205STRLPBF vs IRF3205STRLPBF
IRF3205STRL International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 IRF3205STRLPBF vs IRF3205STRL
IRF3205SPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IRF3205STRLPBF vs IRF3205SPBF
IRF3205S Infineon Technologies AG Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 IRF3205STRLPBF vs IRF3205S
IRF3205STRRPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF3205STRLPBF vs IRF3205STRRPBF

IRF3205STRLPBF Related Parts

IRF3205STRLPBF Frequently Asked Questions (FAQ)

  • The maximum junction temperature of the IRF3205STRLPBF is 175°C.

  • Yes, the IRF3205STRLPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.

  • The maximum gate-source voltage of the IRF3205STRLPBF is ±20V.

  • Yes, the IRF3205STRLPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.

  • Yes, the IRF3205STRLPBF is a RoHS-compliant device, meaning it meets the European Union's Restriction of Hazardous Substances directive.

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