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Transistors Power Field-Effect Transistors IRF331

IRF331
Description: Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204

Overview of IRF331 by Vishay Siliconix

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF331 by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   2
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-3 1
  • 1 $6.0000
$6.0000 Buy Now

CAD Models for IRF331 by Vishay Siliconix
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Part Data Attributes for IRF331 by Vishay Siliconix
Parametric Data

IRF331
Vishay Siliconix
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SILICONIX INC
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SINGLE
DS Breakdown Voltage-Min
350 V
Drain Current-Max (ID)
5.5 A
Drain-source On Resistance-Max
1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Element Material
SILICON
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  1. IRF331
    Vishay Siliconix
    Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204
    VS

Alternate Parts for IRF331

This table gives cross-reference parts and alternative options found for IRF331. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF331, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2N6760TXV Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Microsemi Corporation IRF331 vs 2N6760TXV
JAN2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF331 vs JAN2N6760
2N6760 5.5A, 400V, 1.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited IRF331 vs 2N6760
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, METAL CAN-2 Microsemi Corporation IRF331 vs 2N6760
UFN330 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF331 vs UFN330
JANTX2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF331 vs JANTX2N6760
IRF331 5.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC IRF331 vs IRF331
JANTX2N6760 5.5A, 400V, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN Intersil Corporation IRF331 vs JANTX2N6760
JANTXV2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Microsemi Corporation IRF331 vs JANTXV2N6760
2N6760R1 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors IRF331 vs 2N6760R1
Part Number Description Manufacturer Compare
IRF330-JQR-BR1 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors IRF331 vs IRF330-JQR-BR1
IRF332 Power Field-Effect Transistor, 4.5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF331 vs IRF332
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, METAL CAN-2 Microsemi Corporation IRF331 vs 2N6760
IRF322 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,2.8A I(D),TO-204AA Intersil Corporation IRF331 vs IRF322
JANTXV2N6760 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, FORMERLY TO-3, 2 PIN Intersil Corporation IRF331 vs JANTXV2N6760
IRF320 Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF331 vs IRF320
JAN2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF331 vs JAN2N6760
2N6760TXV 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF331 vs 2N6760TXV
JAN2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Microsemi Corporation IRF331 vs JAN2N6760
2N6760R1 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors IRF331 vs 2N6760R1

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