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Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39AH8949
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Newark | Mosfet, N Ch, 40V, 75A, To-220Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:75A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0043Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRF4104PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 398 |
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$0.9080 / $2.0900 | Buy Now |
DISTI #
63J7299
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Newark | N Channel Mosfet, 40V, 75A To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:75A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF4104PBF Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$0.9090 / $1.3000 | Buy Now |
DISTI #
IRF4104PBF-ND
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DigiKey | MOSFET N-CH 40V 75A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
926 In Stock |
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$0.8444 / $2.0100 | Buy Now |
DISTI #
IRF4104PBF
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Avnet Americas | Trans MOSFET N-CH 40V 120A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF4104PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.7599 / $0.9288 | Buy Now |
DISTI #
942-IRF4104PBF
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Mouser Electronics | MOSFET MOSFT 40V 120A 5.5mOhm 68nC Qg RoHS: Compliant | 628 |
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$0.8730 / $2.0100 | Buy Now |
DISTI #
70017275
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RS | MOSFET, Power, N-Ch, VDSS 40V, RDS(ON) 4.3 Milliohms, ID 120A, TO-220AB, PD 140W,-55C | Infineon IRF4104PBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$1.6600 / $2.0700 | RFQ |
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Future Electronics | Single N-Channel 40 V 5.5 mOhm 100 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 50 Container: Tube | 0Tube |
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$0.8300 / $0.9800 | Buy Now |
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Future Electronics | Single N-Channel 40 V 5.5 mOhm 100 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.8300 / $0.9800 | Buy Now |
DISTI #
IRF4104PBF
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Avnet Americas | Trans MOSFET N-CH 40V 120A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF4104PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$0.7599 / $0.9288 | Buy Now |
DISTI #
IRF4104PBF
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TME | Transistor: N-MOSFET, unipolar, 40V, 120A, 140W, TO220AB Min Qty: 1 | 77 |
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$1.1300 / $1.7000 | Buy Now |
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IRF4104PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF4104PBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 220 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.0055 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 140 W | |
Pulsed Drain Current-Max (IDM) | 470 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF4104PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF4104PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF4104 | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF4104PBF vs IRF4104 |
IRF4104PBF | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRF4104PBF vs IRF4104PBF |
AUIRF4104 | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | IRF4104PBF vs AUIRF4104 |