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Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IRF4905STRRPBFCT-ND
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DigiKey | MOSFET P-CH 55V 42A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
19 In Stock |
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$1.9230 / $2.3200 | Buy Now |
DISTI #
70017671
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RS | MOSFET, Power, P-Ch, VDSS -55V, RDS(ON) 0.02Ohm, ID -74A, D2Pak, PD 200W, VGS +/-20V | Infineon IRF4905STRRPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$1.8300 | RFQ |
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Win Source Electronics | Advanced Process Technology | MOSFET P-CH 55V 42A D2PAK | 385730 |
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$0.7160 / $1.0740 | Buy Now |
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IRF4905STRRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF4905STRRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 52 Weeks | |
Date Of Intro | 1996-07-26 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | HIGH RELIABILITY, AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 140 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 42 A | |
Drain-source On Resistance-Max | 0.02 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 170 W | |
Pulsed Drain Current-Max (IDM) | 280 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF4905STRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF4905STRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
AUIRF4905STRL | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Infineon Technologies AG | IRF4905STRRPBF vs AUIRF4905STRL |
IRF4905STRRPBF | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | IRF4905STRRPBF vs IRF4905STRRPBF |
AUIRF4905STRR | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | International Rectifier | IRF4905STRRPBF vs AUIRF4905STRR |
IRF4905SHR | Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IRF4905STRRPBF vs IRF4905SHR |
IRF4905STRLPBF | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | IRF4905STRRPBF vs IRF4905STRLPBF |
IRF4905SPBF | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IRF4905STRRPBF vs IRF4905SPBF |
IRF4905STRLPBF | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IRF4905STRRPBF vs IRF4905STRLPBF |
IRF4905STRR | Power Field-Effect Transistor, 64A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | International Rectifier | IRF4905STRRPBF vs IRF4905STRR |
AUIRF4905S | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Infineon Technologies AG | IRF4905STRRPBF vs AUIRF4905S |
AUIRF4905S | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | International Rectifier | IRF4905STRRPBF vs AUIRF4905S |