Part Details for IRF512 by Samsung Semiconductor
Overview of IRF512 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IRF512
IRF512 CAD Models
IRF512 Part Data Attributes
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IRF512
Samsung Semiconductor
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Datasheet
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IRF512
Samsung Semiconductor
Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | SFM | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | SAMSUNG | |
Avalanche Energy Rating (Eas) | 19 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 4.9 A | |
Drain-source On Resistance-Max | 0.74 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 43 W | |
Power Dissipation-Max (Abs) | 43 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 42 ns | |
Turn-on Time-Max (ton) | 47 ns |
Alternate Parts for IRF512
This table gives cross-reference parts and alternative options found for IRF512. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF512, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RFP2N10 | Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF512 vs RFP2N10 |
IRF512-009 | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF512 vs IRF512-009 |
IRF540N | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF512 vs IRF540N |
IRF512 | 4.9A, 100V, 0.74ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF512 vs IRF512 |
IRF512 | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF512 vs IRF512 |
IRF540NPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF512 vs IRF540NPBF |
IRF512-010 | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF512 vs IRF512-010 |
IRF540N | Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | IRF512 vs IRF540N |
IRF540N | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF512 vs IRF540N |
IRF512 | 3.5A, 100V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF512 vs IRF512 |