IRF513 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for IRF513 by Fairchild Semiconductor Corporation

Overview of IRF513 by Fairchild Semiconductor Corporation

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Part Details for IRF513

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IRF513 Part Data Attributes

IRF513 Fairchild Semiconductor Corporation
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IRF513 Fairchild Semiconductor Corporation Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 4.9 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 43 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

Alternate Parts for IRF513

This table gives cross-reference parts and alternative options found for IRF513. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF513, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF511 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF513 vs IRF511
IRF513 Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF513 vs IRF513

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