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Transistors / Power Field-Effect Transistors / IRF5210PBF
Datasheets
IRF5210PBF by:

Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRF5210PBF by Infineon Technologies AG

Overview of IRF5210PBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IRF5210PBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7311
Newark P Channel Mosfet, -100V, 40A, To-220Ab, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:40A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF5210PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 8008
  • 1 $2.3400
  • 10 $1.8300
  • 100 $1.5300
  • 500 $1.2800
  • 1,000 $1.1100
  • 3,000 $1.0700
  • 5,000 $1.0400
$1.0400 / $2.3400 Buy Now
DISTI # IRF5210PBF
Avnet Americas Trans MOSFET P-CH 100V 40A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF5210PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Tube 3399
  • 1 $0.8440
$0.8440 Buy Now
DISTI # 63J7311
Avnet Americas Trans MOSFET P-CH 100V 40A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7311) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk 179 Partner Stock
  • 1 $2.3400
  • 10 $1.8300
  • 100 $1.5300
  • 500 $1.2800
  • 1,000 $1.1100
$1.1100 / $2.3400 Buy Now
DISTI # 70016961
RS MOSFET, Power, P-Ch, VDSS -100V, RDS(ON) 0.06Ohm, ID -40A, TO-220AB, PD 200W, VGS+/-20V | Infineon IRF5210PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $2.6200
  • 10 $2.4900
  • 50 $2.3500
  • 100 $2.2200
$2.2200 / $2.6200 RFQ
Bristol Electronics   49
RFQ
DISTI # IRF5210PBF
TME Transistor: P-MOSFET, unipolar, -100V, -40A, 200W, TO220AB Min Qty: 1 2033
  • 1 $1.5200
  • 10 $1.2700
  • 50 $1.1100
  • 100 $1.0500
  • 250 $0.9500
  • 500 $0.8900
  • 1,000 $0.8300
  • 2,000 $0.8100
$0.8100 / $1.5200 Buy Now
DISTI # C1S322000480685
Chip1Stop MOSFET RoHS: Compliant Container: Tube 4572
  • 1 $0.9580
  • 10 $0.8350
  • 100 $0.8210
  • 200 $0.8150
  • 2,000 $0.7530
$0.7530 / $0.9580 Buy Now
CHIPMALL.COM LIMITED MOSFET P-CH 100V 40A TO220AB 10061
  • 5 $0.9666
  • 50 $0.7436
  • 150 $0.6529
  • 500 $0.6142
  • 2,500 $0.5949
$0.5949 / $0.9666 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 546
  • 1 $1.4600
  • 10 $1.0800
  • 50 $1.0400
  • 100 $1.0100
  • 500 $1.0000
  • 1,000 $0.9800
$0.9800 / $1.4600 Buy Now
DISTI # SP001559642
EBV Elektronik Trans MOSFET P-CH 100V 40A 3-Pin(3+Tab) TO-220AB (Alt: SP001559642) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 9 Weeks, 0 Days EBV - 9000
Buy Now
LCSC 100V 40A 0.0610V24A 200W 2V250uA 1 Piece P-Channel TO-220AB MOSFETs ROHS 10071
  • 1 $1.0069
  • 10 $0.8567
  • 50 $0.7746
  • 100 $0.6801
  • 500 $0.6398
  • 1,000 $0.6197
$0.6197 / $1.0069 Buy Now
New Advantage Corporation Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 1000 6000
  • 1,000 $1.0300
  • 6,000 $0.9522
$0.9522 / $1.0300 Buy Now
Win Source Electronics MOSFET P-CH 100V 40A TO-220AB 67800
  • 50 $1.0555
  • 120 $0.8661
  • 180 $0.8390
  • 250 $0.8120
  • 320 $0.7849
  • 430 $0.7037
$0.7037 / $1.0555 Buy Now

Part Details for IRF5210PBF

IRF5210PBF CAD Models

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IRF5210PBF Part Data Attributes

Parametric Data
IRF5210PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF5210PBF Infineon Technologies AG Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 780 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 140 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF5210PBF

This table gives cross-reference parts and alternative options found for IRF5210PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5210PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF5210HR International Rectifier Check for Price Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF5210PBF vs IRF5210HR
IRF5210 TT Electronics Resistors Check for Price Power Field-Effect Transistor, 40A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, IRF5210PBF vs IRF5210
IRF5210 International Rectifier Check for Price Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF5210PBF vs IRF5210
IRF5210PBF International Rectifier Check for Price Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 IRF5210PBF vs IRF5210PBF
Part Number Manufacturer Composite Price Description Compare
IRF5210 TT Electronics Power and Hybrid / Semelab Limited Check for Price 40A, 100V, 0.07ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3 IRF5210PBF vs IRF5210
IRF5210STRRPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 IRF5210PBF vs IRF5210STRRPBF
IRF5210LPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN IRF5210PBF vs IRF5210LPBF
IRF5210L Infineon Technologies AG Check for Price Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN IRF5210PBF vs IRF5210L
IRF5210SHR International Rectifier Check for Price Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 IRF5210PBF vs IRF5210SHR
IXTH36P10 IXYS Corporation $1.4728 Power Field-Effect Transistor, 36A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, IRF5210PBF vs IXTH36P10
IXTH36P10 Littelfuse Inc Check for Price Power Field-Effect Transistor, IRF5210PBF vs IXTH36P10
IRF5210STRLPBF Infineon Technologies AG $1.9374 Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 IRF5210PBF vs IRF5210STRLPBF
IRF5210STRRHR International Rectifier Check for Price Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 IRF5210PBF vs IRF5210STRRHR
IRF5210SPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 IRF5210PBF vs IRF5210SPBF

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