Datasheets
IRF5210STRLPBF by:

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

Part Details for IRF5210STRLPBF by Infineon Technologies AG

Overview of IRF5210STRLPBF by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IRF5210STRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 40M7918
Newark P Channel Mosfet, -100V, 40A D2-Pak, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:38A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF5210STRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 24829
  • 1 $3.3400
  • 10 $2.8500
  • 25 $2.6900
  • 50 $2.5200
  • 100 $2.3600
$2.3600 / $3.3400 Buy Now
DISTI # IRF5210STRLPBF
Avnet Americas Trans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF5210STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel 800
  • 800 $1.5484
  • 1,600 $1.5028
  • 3,200 $1.4573
  • 4,800 $1.4117
  • 6,400 $1.3662
  • 8,000 $1.3207
  • 80,000 $1.2751
$1.2751 / $1.5484 Buy Now
DISTI # IRF5210STRLPBF
Avnet Americas Trans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF5210STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 800 $1.5484
  • 1,600 $1.5028
  • 3,200 $1.4573
  • 4,800 $1.4117
  • 6,400 $1.3662
  • 8,000 $1.3207
  • 80,000 $1.2751
$1.2751 / $1.5484 Buy Now
DISTI # 40M7918
Avnet Americas Trans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 40M7918) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack 2208 Partner Stock
  • 1 $3.2300
  • 10 $2.7900
  • 25 $2.7600
  • 50 $2.5700
  • 100 $2.3700
$2.3700 / $3.2300 Buy Now
DISTI # 70017442
RS MOSFET, Power, P-Ch, VDSS -100V, RDS(ON) 60 Milliohms, ID -38A, D2Pak, PD 170W,-55degc | Infineon IRF5210STRLPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk 300
  • 5 $2.9200
  • 25 $2.7700
  • 50 $2.6200
  • 500 $2.4800
  • 1,250 $2.3300
$2.3300 / $2.9200 Buy Now
Bristol Electronics   Min Qty: 3 484
  • 3 $2.4000
  • 10 $1.8000
  • 29 $1.5000
  • 101 $0.9000
  • 335 $0.8400
$0.8400 / $2.4000 Buy Now
DISTI # IRF5210STRLPBF
TME Transistor: P-MOSFET, unipolar, -100V, -40A, 3.8W, D2PAK Min Qty: 1 705
  • 1 $2.7200
  • 5 $2.2500
  • 25 $1.9900
  • 100 $1.7800
$1.7800 / $2.7200 Buy Now
Ameya Holding Limited Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - D2PAK 4924
RFQ
Velocity Electronics Our Stock 20000
RFQ
Chip 1 Exchange INSTOCK 328
RFQ
DISTI # C1S327400187198
Chip1Stop Trans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant Container: Cut Tape 5378
  • 1 $2.4500
  • 10 $1.5600
  • 50 $1.2700
  • 100 $1.1800
  • 200 $1.1700
  • 500 $1.0500
  • 1,600 $0.9780
  • 3,200 $0.9180
$0.9180 / $2.4500 Buy Now
CHIPMALL.COM LIMITED MOSFET P-CH 100V 38A D2PAK 12869
  • 1 $1.2060
  • 10 $1.0286
  • 100 $0.8197
  • 800 $0.6457
$0.6457 / $1.2060 Buy Now
DISTI # SP001554020
EBV Elektronik Trans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001554020) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 11 Weeks, 0 Days EBV - 69600
Buy Now
LCSC 100V 38A 60m10V38A 4V250uA 1PCSPChannel D2PAK MOSFETs ROHS 12885
  • 1 $1.0487
  • 10 $0.8944
  • 30 $0.8096
  • 100 $0.7128
  • 500 $0.5811
  • 800 $0.5615
$0.5615 / $1.0487 Buy Now
Sense Electronic Company Limited TO-263 1841
RFQ
Win Source Electronics MOSFET P-CH 100V 38A D2PAK 282000
  • 60 $0.8480
  • 145 $0.6960
  • 225 $0.6740
  • 310 $0.6530
  • 400 $0.6310
  • 535 $0.5660
$0.5660 / $0.8480 Buy Now

Part Details for IRF5210STRLPBF

IRF5210STRLPBF Part Data Attributes

IRF5210STRLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF5210STRLPBF Infineon Technologies AG Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks, 3 Days
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 120 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 38 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 170 W
Pulsed Drain Current-Max (IDM) 140 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF5210STRLPBF

This table gives cross-reference parts and alternative options found for IRF5210STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5210STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF5210S Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 International Rectifier IRF5210STRLPBF vs IRF5210S
IRF5210STRRPBF Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 International Rectifier IRF5210STRLPBF vs IRF5210STRRPBF
AUIRF5210STRR Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 International Rectifier IRF5210STRLPBF vs AUIRF5210STRR
AUIRF5210STRR Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 Infineon Technologies AG IRF5210STRLPBF vs AUIRF5210STRR
IRF5210S Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Infineon Technologies AG IRF5210STRLPBF vs IRF5210S
AUIRF5210STRL Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 Infineon Technologies AG IRF5210STRLPBF vs AUIRF5210STRL
IRF5210STRRPBF Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 Infineon Technologies AG IRF5210STRLPBF vs IRF5210STRRPBF
IRF5210SPBF Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 International Rectifier IRF5210STRLPBF vs IRF5210SPBF
IRF5210SPBF Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 Infineon Technologies AG IRF5210STRLPBF vs IRF5210SPBF
Part Number Description Manufacturer Compare
AUIRF5210STRL Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 Infineon Technologies AG IRF5210STRLPBF vs AUIRF5210STRL
AUIRF5210STRR Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 Infineon Technologies AG IRF5210STRLPBF vs AUIRF5210STRR
IXTA52P10P Power Field-Effect Transistor, Littelfuse Inc IRF5210STRLPBF vs IXTA52P10P
IRF5210 40A, 100V, 0.07ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF5210STRLPBF vs IRF5210
SHD225452S Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN Sensitron Semiconductors IRF5210STRLPBF vs SHD225452S
IRF5210HR Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF5210STRLPBF vs IRF5210HR
IRF5210LPBF Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN Infineon Technologies AG IRF5210STRLPBF vs IRF5210LPBF
IRF5210STRRPBF Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 Infineon Technologies AG IRF5210STRLPBF vs IRF5210STRRPBF
IRF5210 Power Field-Effect Transistor, 40A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors IRF5210STRLPBF vs IRF5210
IRF5210 Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRF5210STRLPBF vs IRF5210

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