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Part Details for IRF5305PBF by Infineon Technologies AG
Overview of IRF5305PBF by Infineon Technologies AG
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF5305PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
63J7317
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Newark | P Channel Mosfet, -55V, 31A, To-220Ab, Channel Type:P Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:31A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF5305PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 5202 |
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$0.5390 / $1.2700 | Buy Now |
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DISTI #
IRF5305PBF
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Avnet Americas | Transistor MOSFET N-CH 55V 31A 3-Pin TO-220AB Tube - Rail/Tube (Alt: IRF5305PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Tube | 12685 |
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$0.4311 | Buy Now |
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DISTI #
63J7317
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Avnet Americas | Transistor MOSFET N-CH 55V 31A 3-Pin TO-220AB Tube - Bulk (Alt: 63J7317) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 1322 Partner Stock |
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$0.6150 / $1.2700 | Buy Now |
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DISTI #
70016962
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RS | MOSFET, Power, P-Ch, VDSS -55V, RDS(ON) 0.06Ohm, ID -31A, TO-220AB, PD 110W, VGS +/-20V | Infineon IRF5305PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 121 Weeks, 0 Days Container: Bulk | 0 |
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$1.0600 / $1.2500 | RFQ |
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Bristol Electronics | 924 |
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RFQ | ||
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Rochester Electronics | IRF5305 - 55V Single P-Channel HEXFET Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | Call for Availability |
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$0.4887 / $0.5749 | Buy Now |
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DISTI #
IRF5305PBF
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TME | Transistor: P-MOSFET, unipolar, -55V, -31A, 110W, TO220AB Min Qty: 1 | 2294 |
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$0.4810 / $1.1470 | Buy Now |
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Ameya Holding Limited | Single P-Channel 55 V 0.06 Ohm 63 nC HEXFET® Power Mosfet - TO-220-3 | 2000 |
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RFQ | |
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DISTI #
SMC-IRF5305PBF
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Sensible Micro Corporation | 55V 31A 60M@10V,16A 110W P Channel To2203 Mosfets Rohs RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Container: Tubes | 250 |
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$0.2700 / $0.2925 | RFQ |
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DISTI #
C1S322000480737
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Chip1Stop | Trans MOSFET P-CH Si 55V 31A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Container: Tube | 4538 |
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$0.4260 / $0.6330 | Buy Now |
Part Details for IRF5305PBF
IRF5305PBF CAD Models
IRF5305PBF Part Data Attributes
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IRF5305PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF5305PBF
Infineon Technologies AG
Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 280 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 31 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |