Part Details for IRF530N by Fairchild Semiconductor Corporation
Overview of IRF530N by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF530N
IRF530N CAD Models
IRF530N Part Data Attributes:
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IRF530N
Fairchild Semiconductor Corporation
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Datasheet
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IRF530N
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 22A I(D), 100V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 22 A | |
Drain-source On Resistance-Max | 0.064 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 85 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF530N
This table gives cross-reference parts and alternative options found for IRF530N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF530N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF530NHR | Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF530N vs IRF530NHR |
IRF530N | Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF530N vs IRF530N |
934055534127 | TRANSISTOR 17 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | NXP Semiconductors | IRF530N vs 934055534127 |
IRF530NPBF | Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRF530N vs IRF530NPBF |
IRF530N | Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IRF530N vs IRF530N |
IRF530NPBF | Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF530N vs IRF530NPBF |
IRF530N | 17A, 100V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN | NXP Semiconductors | IRF530N vs IRF530N |