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Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
41K2308
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Newark | N Channel Mosfet, 100V, 14A, D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:14A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRF530SPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 7 |
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$0.5340 | Buy Now |
DISTI #
IRF530SPBF
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Avnet Americas | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK - Bulk (Alt: IRF530SPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
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$0.7547 / $0.9587 | Buy Now |
DISTI #
41K2308
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Avnet Americas | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK - Bulk (Alt: 41K2308) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 5 Days Container: Bulk | 7 Partner Stock |
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$1.0400 | Buy Now |
DISTI #
844-IRF530SPBF
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Mouser Electronics | MOSFET 100V N-CH HEXFET D2-PAK RoHS: Compliant | 3206 |
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$0.6980 / $1.2300 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.16 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 1139Tube |
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$0.6850 / $0.8450 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.16 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.6850 / $0.8450 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 100V, 0.16OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 40 |
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$1.5750 / $2.5200 | Buy Now |
DISTI #
IRF530SPBF
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TTI | MOSFET 100V N-CH HEXFET D2-PAK RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 1050 In Stock |
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$0.7000 / $0.8200 | Buy Now |
DISTI #
IRF530SPBF
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Avnet Americas | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK - Bulk (Alt: IRF530SPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
|
$0.7547 / $0.9587 | Buy Now |
DISTI #
41K2308
|
Avnet Americas | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK - Bulk (Alt: 41K2308) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 5 Days Container: Bulk | 7 Partner Stock |
|
$1.0400 | Buy Now |
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IRF530SPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF530SPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks, 5 Days | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 69 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.16 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 88 W | |
Pulsed Drain Current-Max (IDM) | 56 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF530SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF530SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF530STRRPBF | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | International Rectifier | IRF530SPBF vs IRF530STRRPBF |
IRF530SPBF | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | International Rectifier | IRF530SPBF vs IRF530SPBF |
SIHF530STRR-GE3 | TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | IRF530SPBF vs SIHF530STRR-GE3 |
SIHF530STRL-GE3 | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Intertechnologies | IRF530SPBF vs SIHF530STRL-GE3 |
IRF530S | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF530SPBF vs IRF530S |
IRF530STRRPBF | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | Vishay Intertechnologies | IRF530SPBF vs IRF530STRRPBF |
SIHF530STRR-GE3 | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Intertechnologies | IRF530SPBF vs SIHF530STRR-GE3 |
SIHF530S-GE3 | TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | IRF530SPBF vs SIHF530S-GE3 |
IRF530STRLPBF | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRF530SPBF vs IRF530STRLPBF |
IRF530STRRPBF | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRF530SPBF vs IRF530STRRPBF |