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Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF540NPBF-ND
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DigiKey | MOSFET N-CH 100V 33A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
142897 In Stock |
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$0.5012 / $1.3300 | Buy Now |
DISTI #
IRF540NPBF
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Avnet Americas | Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF540NPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube | 337968 |
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$0.4669 / $0.5669 | Buy Now |
DISTI #
63J7319
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Avnet Americas | Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7319) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Bulk | 15093 Partner Stock |
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$0.6920 / $1.1400 | Buy Now |
DISTI #
942-IRF540NPBF
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Mouser Electronics | MOSFET MOSFT 100V 33A 44mOhm 47.3nC RoHS: Compliant | 10076 |
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$0.5010 / $1.0900 | Buy Now |
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Future Electronics | Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 103800Tube |
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$0.4600 / $0.5600 | Buy Now |
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Future Electronics | Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1 Container: Tube | 5600Tube |
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$0.2600 / $0.3100 | Buy Now |
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Future Electronics | Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1200 Package Multiple: 50 Container: Tube | 0Tube |
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$0.4600 / $0.5450 | Buy Now |
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Future Electronics | Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.4600 / $0.5600 | Buy Now |
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Bristol Electronics | 150 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 766 |
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$0.4641 / $1.7850 | Buy Now |
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IRF540NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF540NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 185 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 33 A | |
Drain-source On Resistance-Max | 0.044 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 250 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 130 W | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF540NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF540N | Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | IRF540NPBF vs IRF540N |
IRF512-006 | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF540NPBF vs IRF512-006 |
IRF540N | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF540NPBF vs IRF540N |
IRF512 | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF540NPBF vs IRF512 |
2SK2050 | Power Field-Effect Transistor, 30A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fuji Electric Co Ltd | IRF540NPBF vs 2SK2050 |
IRF540N | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF540NPBF vs IRF540N |
IRF512-009 | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF540NPBF vs IRF512-009 |