Datasheets
IRF540NPBF by:

Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRF540NPBF by Infineon Technologies AG

Overview of IRF540NPBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IRF540NPBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7319
Newark N Channel, Mosfet, 100V, 33A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:33A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF540NPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 103416
  • 1 $0.5810
  • 10 $0.5810
  • 100 $0.5810
  • 500 $0.5320
  • 1,000 $0.5320
  • 3,000 $0.4910
  • 10,000 $0.4910
$0.4910 / $0.5810 Buy Now
DISTI # IRF540NPBF
Avnet Americas Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF540NPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube 335828
  • 1 $0.4169
$0.4169 Buy Now
DISTI # 63J7319
Avnet Americas Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7319) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Bulk 13895 Partner Stock
  • 1 $1.1400
  • 10 $1.0400
  • 100 $0.8550
  • 500 $0.7670
  • 1,000 $0.6920
$0.6920 / $1.1400 Buy Now
Bristol Electronics   150
RFQ
Rochester Electronics IRF540NPBF - PLANAR >= 100V RoHS: Compliant Status: Active Min Qty: 1 1167
  • 1 $0.5836
  • 25 $0.5719
  • 100 $0.5486
  • 500 $0.5252
  • 1,000 $0.4961
$0.4961 / $0.5836 Buy Now
DISTI # IRF540NPBF
TME Transistor: N-MOSFET, unipolar, 100V, 33A, 140W, TO220AB Min Qty: 1 4016
  • 1 $0.7950
  • 3 $0.5780
  • 10 $0.4940
  • 50 $0.4610
  • 250 $0.4280
  • 500 $0.4110
$0.4110 / $0.7950 Buy Now
Ameya Holding Limited Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3 40000
RFQ
DISTI # TMOSP11812
Rutronik N-CH 100V 33A 44mOhm TO220-3 RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube Stock DE - 10850
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 50 $0.4856
  • 150 $0.4578
  • 300 $0.4301
  • 700 $0.3884
  • 1,550 $0.3746
$0.3746 / $0.4856 Buy Now
DISTI # SMC-IRF540NPBF
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 2555
RFQ
DISTI # SMC-IRF540NPBF
Sensible Micro Corporation Ic,To-220Ab,3,N-Ch 100V 27A RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 2011+ Container: Tubes 400
  • 100 $0.1520
  • 500 $0.1520
  • 1,000 $0.1520
$0.1520 RFQ
CHIPMALL.COM LIMITED MOSFET N-CH 100V 33A TO220AB 146930
  • 1 $0.3621
  • 10 $0.2838
  • 100 $0.2124
  • 500 $0.2038
  • 1,000 $0.1985
$0.1985 / $0.3621 Buy Now
DISTI # SP001561906
EBV Elektronik Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-220AB (Alt: SP001561906) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 11 Weeks, 0 Days EBV - 239000
Buy Now
LCSC 100V 33A 44m10V16A 130W 4V250uA 1PCSNChannel TO-220AB MOSFETs ROHS 146935
  • 1 $0.3149
  • 10 $0.2468
  • 50 $0.2150
  • 100 $0.1847
  • 500 $0.1772
  • 1,000 $0.1726
$0.1726 / $0.3149 Buy Now
New Advantage Corporation Single N-Channel 100 V 44 mOhm 71 nC HEXFET� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 234750
  • 300 $0.5571
  • 234,750 $0.5200
$0.5200 / $0.5571 Buy Now
Sense Electronic Company Limited TO-220 9617
RFQ
Win Source Electronics MOSFET N-CH 100V 33A TO-220AB 289000
  • 190 $0.2690
  • 455 $0.2210
  • 705 $0.2140
  • 970 $0.2070
  • 1,250 $0.2000
  • 1,680 $0.1790
$0.1790 / $0.2690 Buy Now

Part Details for IRF540NPBF

IRF540NPBF CAD Models

IRF540NPBF Part Data Attributes

IRF540NPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF540NPBF Infineon Technologies AG Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks, 3 Days
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 185 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 33 A
Drain-source On Resistance-Max 0.044 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 130 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF540NPBF

This table gives cross-reference parts and alternative options found for IRF540NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF512-009 Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF540NPBF vs IRF512-009
IRF512 3.5A, 100V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF540NPBF vs IRF512
IRF512-006 Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF540NPBF vs IRF512-006
IRF540N Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF540NPBF vs IRF540N
IRF512-010 Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF540NPBF vs IRF512-010
IRF540N Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRF540NPBF vs IRF540N
IRF512 4.9A, 100V, 0.74ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF540NPBF vs IRF512
IRF540N 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF540NPBF vs IRF540N
IRF512 Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF540NPBF vs IRF512
IRF540N Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation IRF540NPBF vs IRF540N
Part Number Description Manufacturer Compare
SUP85N10-10-E3 Power Field-Effect Transistor, 85A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRF540NPBF vs SUP85N10-10-E3
IRF2807 Power Field-Effect Transistor, 82A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRF540NPBF vs IRF2807
MTP4N08 4A, 80V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF540NPBF vs MTP4N08
IRF511-001 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF540NPBF vs IRF511-001
IRF511 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF540NPBF vs IRF511
IRF511 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF540NPBF vs IRF511
IRFZ48VPBF Power Field-Effect Transistor, 72A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRF540NPBF vs IRFZ48VPBF
IRF513-009 Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF540NPBF vs IRF513-009
IRF513 Power Field-Effect Transistor, 3.5A I(D), 60V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF540NPBF vs IRF513
IRF540N Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRF540NPBF vs IRF540N

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