Datasheets
IRF610A by:

Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for IRF610A by Motorola Semiconductor Products

Overview of IRF610A by Motorola Semiconductor Products

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Part Details for IRF610A

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IRF610A Part Data Attributes:

IRF610A Motorola Semiconductor Products
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IRF610A Motorola Semiconductor Products Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 20 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IRF610A

This table gives cross-reference parts and alternative options found for IRF610A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF610A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF610A 2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF610A vs IRF610A
IRF610A Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRF610A vs IRF610A
IRF610A Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF610A vs IRF610A
Part Number Description Manufacturer Compare
IRF610A Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRF610A vs IRF610A
IRF610A Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF610A vs IRF610A
IRF610A 2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF610A vs IRF610A

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