Datasheets
IRF614SPBF by:

Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

Part Details for IRF614SPBF by Vishay Intertechnologies

Overview of IRF614SPBF by Vishay Intertechnologies

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IRF614SPBF

Part # Distributor Description Stock Price Buy
DISTI # IRF614SPBF
Avnet Americas Trans MOSFET N-CH 250V 2.7A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: IRF614SPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.9587
  • 2,000 $0.9279
  • 4,000 $0.8972
  • 6,000 $0.8609
  • 8,000 $0.8329
  • 10,000 $0.7938
  • 100,000 $0.7547
$0.7547 / $0.9587 Buy Now
DISTI # 844-IRF614SPBF
Mouser Electronics MOSFET 250V N-CH HEXFET D2-PA RoHS: Compliant 0
  • 1,000 $0.7900
  • 2,000 $0.7500
  • 5,000 $0.7220
  • 10,000 $0.6980
$0.6980 / $0.7900 Order Now
Future Electronics N-Channel 250 V 2 Ohm 8.2 nC Surface Mount Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 1 $0.8750
  • 50 $0.8400
  • 200 $0.8050
  • 750 $0.7700
  • 2,500 $0.7100
$0.7100 / $0.8750 Buy Now
Future Electronics N-Channel 250 V 2 Ohm 8.2 nC Surface Mount Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 1 $0.8750
  • 50 $0.8400
  • 200 $0.8050
  • 750 $0.7700
  • 2,500 $0.7100
$0.7100 / $0.8750 Buy Now
DISTI # IRF614SPBF
TTI MOSFET 250V N-CH HEXFET D2-PA RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Bulk Americas - 0
  • 1,000 $0.7700
  • 2,000 $0.7400
  • 3,000 $0.7300
  • 5,000 $0.7100
  • 10,000 $0.7000
$0.7000 / $0.7700 Buy Now
DISTI # IRF614SPBF
Avnet Americas Trans MOSFET N-CH 250V 2.7A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: IRF614SPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.9587
  • 2,000 $0.9279
  • 4,000 $0.8972
  • 6,000 $0.8609
  • 8,000 $0.8329
  • 10,000 $0.7938
  • 100,000 $0.7547
$0.7547 / $0.9587 Buy Now
DISTI # IRF614SPBF
TME Transistor: N-MOSFET, unipolar, 250V, 2.7A, Idm: 8A, 36W Min Qty: 1 0
  • 1 $1.0500
  • 10 $0.9400
  • 50 $0.8300
  • 250 $0.7400
  • 1,000 $0.7000
$0.7000 / $1.0500 RFQ
DISTI # IRF614SPBF
EBV Elektronik Trans MOSFET N-CH 250V 2.7A 3-Pin(2+Tab) D2PAK (Alt: IRF614SPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now

Part Details for IRF614SPBF

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IRF614SPBF Part Data Attributes:

IRF614SPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRF614SPBF Vishay Intertechnologies Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 2.7 A
Drain-source On Resistance-Max 2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 36 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF614SPBF

This table gives cross-reference parts and alternative options found for IRF614SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF614SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHF614S-GE3 Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Intertechnologies IRF614SPBF vs SIHF614S-GE3
SIHF614S-GE3 TRANSISTOR 2.7 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRF614SPBF vs SIHF614S-GE3
IRF614STRRPBF Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies IRF614SPBF vs IRF614STRRPBF
IRF614STRR Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF614SPBF vs IRF614STRR
IRF614STRL Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF614SPBF vs IRF614STRL
IRF614S Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF614SPBF vs IRF614S
Part Number Description Manufacturer Compare
IRF614STRL Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF614SPBF vs IRF614STRL
IRF614S Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF614SPBF vs IRF614S
IRF614STRR Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF614SPBF vs IRF614STRR
SIHF614S-GE3 Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Intertechnologies IRF614SPBF vs SIHF614S-GE3
IRF614STRRPBF Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies IRF614SPBF vs IRF614STRRPBF
SIHF614S-GE3 TRANSISTOR 2.7 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRF614SPBF vs SIHF614S-GE3

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