Part Details for IRF622 by Harris Semiconductor
Overview of IRF622 by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF622
IRF622 CAD Models
IRF622 Part Data Attributes
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IRF622
Harris Semiconductor
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Datasheet
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IRF622
Harris Semiconductor
Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 1.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 40 W | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 16 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 160 ns | |
Turn-on Time-Max (ton) | 100 ns |
Alternate Parts for IRF622
This table gives cross-reference parts and alternative options found for IRF622. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF622, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF621 | Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF622 vs IRF621 |
IRF621 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Advanced Microelectronic Products Inc | IRF622 vs IRF621 |
IRF621 | Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF622 vs IRF621 |
IRF622 | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,4A I(D),TO-220AB | National Semiconductor Corporation | IRF622 vs IRF622 |
IRF623 | TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,4A I(D),TO-220AB | Diodes Incorporated | IRF622 vs IRF623 |
IRF623 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Zetex / Diodes Inc | IRF622 vs IRF623 |
IRF622 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Advanced Microelectronic Products Inc | IRF622 vs IRF622 |
IRF622 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Thomson Consumer Electronics | IRF622 vs IRF622 |
IRF622 | Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF622 vs IRF622 |
IRF623 | TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,4A I(D),TO-220AB | National Semiconductor Corporation | IRF622 vs IRF623 |