Datasheets
IRF622 by:

Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for IRF622 by Harris Semiconductor

Overview of IRF622 by Harris Semiconductor

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Part Details for IRF622

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IRF622 Part Data Attributes

IRF622 Harris Semiconductor
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IRF622 Harris Semiconductor Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 40 W
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 160 ns
Turn-on Time-Max (ton) 100 ns

Alternate Parts for IRF622

This table gives cross-reference parts and alternative options found for IRF622. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF622, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF621 Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF622 vs IRF621
IRF621 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Advanced Microelectronic Products Inc IRF622 vs IRF621
IRF621 Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF622 vs IRF621
IRF622 TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,4A I(D),TO-220AB National Semiconductor Corporation IRF622 vs IRF622
IRF623 TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,4A I(D),TO-220AB Diodes Incorporated IRF622 vs IRF623
IRF623 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Zetex / Diodes Inc IRF622 vs IRF623
IRF622 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Advanced Microelectronic Products Inc IRF622 vs IRF622
IRF622 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Thomson Consumer Electronics IRF622 vs IRF622
IRF622 Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF622 vs IRF622
IRF623 TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,4A I(D),TO-220AB National Semiconductor Corporation IRF622 vs IRF623
Part Number Description Manufacturer Compare
IRF620 5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF622 vs IRF620
IRF621 5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF622 vs IRF621
IRF621 5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF622 vs IRF621
PHP5N20E TRANSISTOR 5 A, 200 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power NXP Semiconductors IRF622 vs PHP5N20E
IRF623-001 Power Field-Effect Transistor, 4.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF622 vs IRF623-001
IRF622 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF622 vs IRF622
IRF623 4A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics IRF622 vs IRF623
IRF620-009 Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF622 vs IRF620-009
IRF623-010 Power Field-Effect Transistor, 4.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF622 vs IRF623-010
BUZ73A 5.8A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF622 vs BUZ73A

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