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Transistors / Power Field-Effect Transistors / IRF630N
Datasheets
IRF630N by:

Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for IRF630N by International Rectifier

Results Overview of IRF630N by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRF630N Information

IRF630N by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF630N

Part # Distributor Description Stock Price Buy
Bristol Electronics   44
RFQ
ComSIT USA Electronic Component RoHS: Not Compliant Stock DE - 0
Stock ES - 351
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 200
  • 1 $3.8500
  • 100 $2.8800
  • 1,000 $2.5000
$2.5000 / $3.8500 Buy Now
Win Source Electronics Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) 38700
  • 230 $0.2214
  • 485 $0.2072
  • 750 $0.2000
  • 1,080 $0.1857
  • 1,400 $0.1786
  • 1,750 $0.1715
$0.1715 / $0.2214 Buy Now

Part Details for IRF630N

IRF630N CAD Models

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IRF630N Part Data Attributes

Parametric Data
IRF630N International Rectifier
Buy Now Datasheet
Compare Parts:
IRF630N International Rectifier Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description TO-220AB, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature FAST SWITCHING, AVALANCHE RATED
Avalanche Energy Rating (Eas) 94 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 9.3 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 82 W
Pulsed Drain Current-Max (IDM) 37 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF630N

This table gives cross-reference parts and alternative options found for IRF630N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF630N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BUZ32 Harris Semiconductor Check for Price Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF630N vs BUZ32
IRF630NPBF International Rectifier Check for Price Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 IRF630N vs IRF630NPBF
BUZ32 STMicroelectronics Check for Price 11A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN IRF630N vs BUZ32
BUZ32 Thomson Consumer Electronics Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET IRF630N vs BUZ32
BUZ32 TT Electronics Power and Hybrid / Semelab Limited Check for Price 9.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET IRF630N vs BUZ32
BUK454-200A NXP Semiconductors Check for Price TRANSISTOR 9.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power IRF630N vs BUK454-200A
Part Number Manufacturer Composite Price Description Compare
BUZ32 TT Electronics Resistors Check for Price Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF630N vs BUZ32
BUZ32 Intersil Corporation Check for Price 9.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF630N vs BUZ32
IRF631 Motorola Mobility LLC Check for Price 9A, 150V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF630N vs IRF631
IRF632 Rochester Electronics LLC Check for Price 8A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF630N vs IRF632
IRF631-006 International Rectifier Check for Price Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF630N vs IRF631-006
IRF633 Rochester Electronics LLC Check for Price 8A, 150V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF630N vs IRF633
IRF630NLPBF International Rectifier Check for Price Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN IRF630N vs IRF630NLPBF
RFP2N18 Rochester Electronics LLC Check for Price 2A, 180V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF630N vs RFP2N18
IRF630NL Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA IRF630N vs IRF630NL
RFP2N18 Harris Semiconductor Check for Price Power Field-Effect Transistor, 2A I(D), 180V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF630N vs RFP2N18

IRF630N Related Parts

IRF630N Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the IRF630N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 50-70% of its maximum rating to ensure reliable operation.

  • To ensure the IRF630N is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive voltage should be able to supply sufficient current to charge the gate capacitance quickly. A gate resistor value of 10-20 ohms is typically recommended.

  • The maximum allowed drain-source voltage (Vds) for the IRF630N is 200V, as specified in the datasheet. However, it's recommended to derate the voltage by 10-20% to ensure reliable operation and to account for voltage spikes or transients.

  • Thermal management is critical for the IRF630N. Ensure good thermal contact between the device and a heat sink, and use a thermal interface material (TIM) if necessary. The maximum junction temperature (Tj) is 150°C, and the device should be operated at a temperature below 125°C for reliable operation.

  • Yes, the IRF630N can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is capable of providing a fast switching signal. Additionally, the device's parasitic capacitances and inductances should be minimized to prevent ringing and oscillations.

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