Part Details for IRF630NSTRLPBF by Infineon Technologies AG
Overview of IRF630NSTRLPBF by Infineon Technologies AG
- Distributor Offerings: (24 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF630NSTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC9181
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Newark | Mosfet, N-Ch, 200V, 9.3A, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:9.3A, Drain Source Voltage Vds:200V, On Resistance Rds(On):0.3Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipationrohs Compliant: Yes |Infineon IRF630NSTRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.7480 / $1.3000 | Buy Now |
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DISTI #
86AK5360
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Newark | Mosfet, N-Ch, 200V, 9.3A, To-263 Rohs Compliant: Yes |Infineon IRF630NSTRLPBF Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.6020 / $0.7270 | Buy Now |
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DISTI #
IRF630NSTRLPBFCT-ND
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DigiKey | MOSFET N-CH 200V 9.3A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Tape & Reel (TR) |
1254 In Stock |
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$0.4728 / $1.2600 | Buy Now |
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DISTI #
IRF630NSTRLPBF
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Avnet Americas | Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF630NSTRLPBF) RoHS: Compliant Min Qty: 1600 Package Multiple: 800 Container: Reel | 800 |
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RFQ | |
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DISTI #
E02:0323_00177176
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Arrow Electronics | Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks Date Code: 2406 | Europe - 800 |
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$0.4104 / $0.4875 | Buy Now |
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DISTI #
V36:1790_13890568
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Arrow Electronics | Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 98 Weeks Date Code: 2348 | Americas - 800 |
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$0.4255 / $0.5169 | Buy Now |
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DISTI #
V72:2272_13890568
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Arrow Electronics | Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 98 Weeks Date Code: 2244 Container: Cut Strips | Americas - 32 |
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$0.5221 / $0.6173 | Buy Now |
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DISTI #
70019553
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RS | IRF630NSTRLPBF N-channel MOSFET Transistor, 9.3 A, 200 V, 3+Tab-Pin D2PAK | Infineon IRF630NSTRLPBF RoHS: Not Compliant Min Qty: 16 Package Multiple: 1 Container: Bulk | 0 |
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$1.0100 / $1.2600 | RFQ |
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DISTI #
71239511
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Verical | Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R Min Qty: 46 Package Multiple: 1 Date Code: 2328 | Americas - 1495 |
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$0.5750 / $0.6863 | Buy Now |
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DISTI #
77828027
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Verical | Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2406 | Americas - 800 |
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$0.4091 / $0.4859 | Buy Now |
Part Details for IRF630NSTRLPBF
IRF630NSTRLPBF CAD Models
IRF630NSTRLPBF Part Data Attributes:
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IRF630NSTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF630NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 94 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 9.3 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 82 W | |
| Pulsed Drain Current-Max (IDM) | 37 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF630NSTRLPBF
This table gives cross-reference parts and alternative options found for IRF630NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF630NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF630NS | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRF630NSTRLPBF vs IRF630NS |
| IRF630NSTRRPBF | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF630NSTRLPBF vs IRF630NSTRRPBF |
| IRF630NSTRRPBF | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF630NSTRLPBF vs IRF630NSTRRPBF |
| IRF630NSPBF | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF630NSTRLPBF vs IRF630NSPBF |
| IRF630NSTRLPBF | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF630NSTRLPBF vs IRF630NSTRLPBF |
| IRF630NSTRR | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRF630NSTRLPBF vs IRF630NSTRR |