Part Details for IRF630PBF by Vishay Intertechnologies
Overview of IRF630PBF by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF630PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
31K2169
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Newark | N Channel Mosfet, 200V, 9A, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:9A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, No. Of Pins:3Pins Rohs Compliant: Yes |Vishay IRF630PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 971 |
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$0.5310 | Buy Now |
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DISTI #
IRF630PBF
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Avnet Americas | Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRF630PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
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$0.5925 | Buy Now |
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DISTI #
31K2169
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Avnet Americas | Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 31K2169) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 1 Days Container: Bulk | 971 Partner Stock |
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$0.8580 / $1.1800 | Buy Now |
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DISTI #
844-IRF630PBF
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Mouser Electronics | MOSFET 200V N-CH HEXFET RoHS: Compliant | 9630 |
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$0.5890 / $1.1400 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.4 Ω 43 nC Power Mosfet - TO-220-3 (TO-220AB) RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.4600 / $0.5650 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.4 Ω 43 nC Power Mosfet - TO-220-3 (TO-220AB) RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.4600 / $0.5650 | Buy Now |
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Bristol Electronics | 30 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 24 |
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$0.7980 / $1.3300 | Buy Now |
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DISTI #
IRF630PBF
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TTI | MOSFET 200V N-CH HEXFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 6150 In Stock |
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$0.5500 / $0.9000 | Buy Now |
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DISTI #
IRF630PBF
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Avnet Americas | Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRF630PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
|
$0.5925 | Buy Now |
Part Details for IRF630PBF
IRF630PBF CAD Models
IRF630PBF Part Data Attributes
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IRF630PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF630PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks, 1 Day | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | PURE MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF630PBF
This table gives cross-reference parts and alternative options found for IRF630PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF630PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF630 | Power Field-Effect Transistor, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Unitrode Corp (RETIRED) | IRF630PBF vs IRF630 |
| IRF630 | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3 | NXP Semiconductors | IRF630PBF vs IRF630 |
| IRF630 | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF630PBF vs IRF630 |
| IRF630 | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF630PBF vs IRF630 |
| IRF630 | TRANSISTOR 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | IRF630PBF vs IRF630 |
| IRF630 | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Siliconix | IRF630PBF vs IRF630 |
| IRF630 | Power Field-Effect Transistor, 9A I(D), 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Unitrode Corporation | IRF630PBF vs IRF630 |
| IRF630 | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Vishay Intertechnologies | IRF630PBF vs IRF630 |
| IRF630 | N-channel 200 V, 0.35 Ohm typ., 9 A Power MOSFET in DPAK package | STMicroelectronics | IRF630PBF vs IRF630 |
| IRF630 | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 | Microsemi Corporation | IRF630PBF vs IRF630 |