Part Details for IRF630SPBF by Vishay Intertechnologies
Overview of IRF630SPBF by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF630SPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
63J7340
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Newark | N Channel Mosfet, 200V, 9A, Smd-220, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRF630SPBF Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.7500 / $0.8370 | Buy Now |
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DISTI #
IRF630SPBF
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Avnet Americas | Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK - Bulk (Alt: IRF630SPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
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$0.7385 / $0.9381 | Buy Now |
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DISTI #
844-IRF630SPBF
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Mouser Electronics | MOSFET 200V N-CH HEXFET D2-PA RoHS: Compliant | 5191 |
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$0.6830 / $1.6200 | Buy Now |
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Future Electronics | IRF630S Series N-Channel 200 V 400 mOhms Surface Mount Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0Tube |
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$0.6850 / $0.7400 | Buy Now |
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Future Electronics | IRF630S Series N-Channel 200 V 400 mOhms Surface Mount Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0Tube |
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$0.6850 / $0.7400 | Buy Now |
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DISTI #
IRF630SPBF
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TTI | MOSFET 200V N-CH HEXFET D2-PA RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube | Americas - 0 |
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$0.6800 / $0.7800 | Buy Now |
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DISTI #
IRF630SPBF
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Avnet Americas | Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK - Bulk (Alt: IRF630SPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
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$0.7385 / $0.9381 | Buy Now |
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DISTI #
IRF630SPBF
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TME | Transistor: N-MOSFET, unipolar, 200V, 5.7A, Idm: 36A, 74W Min Qty: 1 | 267 |
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$0.5370 / $0.8160 | Buy Now |
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DISTI #
IRF630SPBF
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Avnet Americas | Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK - Bulk (Alt: IRF630SPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
|
$0.7385 / $0.9381 | Buy Now |
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DISTI #
IRF630SPBF
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EBV Elektronik | Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK (Alt: IRF630SPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 1 Weeks, 6 Days | EBV - 0 |
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Buy Now |
Part Details for IRF630SPBF
IRF630SPBF CAD Models
IRF630SPBF Part Data Attributes
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IRF630SPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF630SPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 74 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF630SPBF
This table gives cross-reference parts and alternative options found for IRF630SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF630SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF630S | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3 | NXP Semiconductors | IRF630SPBF vs IRF630S |
| IRF630S | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF630SPBF vs IRF630S |
| IRF630STRR | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF630SPBF vs IRF630STRR |
| IRF630ST4 | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | STMicroelectronics | IRF630SPBF vs IRF630ST4 |
| IRF630S/T3 | TRANSISTOR 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3, FET General Purpose Power | NXP Semiconductors | IRF630SPBF vs IRF630S/T3 |
| IRF630STRRPBF | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | Vishay Intertechnologies | IRF630SPBF vs IRF630STRRPBF |
| IRF630SPBF | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | International Rectifier | IRF630SPBF vs IRF630SPBF |
| IRF630S | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF630SPBF vs IRF630S |
| IRF630STRRPBF | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SMD-220, 3 PIN | Vishay Siliconix | IRF630SPBF vs IRF630STRRPBF |
| IRF630SPBF | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SMD-220, 3 PIN | Vishay Siliconix | IRF630SPBF vs IRF630SPBF |