Part Details for IRF640 by Motorola Semiconductor Products
Overview of IRF640 by Motorola Semiconductor Products
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF640
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 1160 |
|
$1.6665 / $3.0300 | Buy Now |
|
|
Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 650 |
|
$2.5245 / $4.5900 | Buy Now |
|
|
Component Electronics, Inc | IN STOCK SHIP TODAY | 150 |
|
$1.0000 / $1.5400 | Buy Now |
Part Details for IRF640
IRF640 CAD Models
IRF640 Part Data Attributes
|
|
IRF640
Motorola Semiconductor Products
Buy Now
Datasheet
|
Compare Parts:
IRF640
Motorola Semiconductor Products
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 300 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 125 W | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 140 ns | |
| Turn-on Time-Max (ton) | 90 ns |