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Transistors / Power Field-Effect Transistors / IRF640
Datasheets
IRF640 by:

18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

Part Details for IRF640 by STMicroelectronics

Results Overview of IRF640 by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRF640 Information

IRF640 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF640

Part # Distributor Description Stock Price Buy
Bristol Electronics   20
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 39
  • 1 $1.5400
  • 100 $1.1500
  • 1,000 $1.0000
$1.0000 / $1.5400 Buy Now
Win Source Electronics N-channel TrenchMOS transistor | MOSFET N-CH 200V 18A TO-220 13144
  • 75 $0.7058
  • 175 $0.5792
  • 270 $0.5611
  • 370 $0.5430
  • 480 $0.5249
  • 640 $0.4706
$0.4706 / $0.7058 Buy Now

Part Details for IRF640

IRF640 Part Data Attributes

Parametric Data
IRF640 STMicroelectronics
Buy Now Datasheet
Compare Parts:
IRF640 STMicroelectronics 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 280 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 150 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 190 ns
Turn-on Time-Max (ton) 185 ns

Alternate Parts for IRF640

This table gives cross-reference parts and alternative options found for IRF640. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF640 Unitrode Corporation Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF640 vs IRF640
IRF640,127 NXP Semiconductors Check for Price IRF640 IRF640 vs IRF640,127
IRF640 NXP Semiconductors Check for Price 16A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN IRF640 vs IRF640
IRF640 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF640 vs IRF640
IRF640 Vishay Siliconix Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRF640 vs IRF640
IRF640 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF640 vs IRF640

IRF640 Related Parts

IRF640 Frequently Asked Questions (FAQ)

  • The IRF640 can operate safely between -55°C and 150°C, but the recommended operating temperature range is -40°C to 125°C.

  • To ensure the IRF640 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate current should be sufficient to charge the gate capacitance quickly.

  • The maximum continuous drain current (ID) rating for the IRF640 is 18A, but this can be increased to 36A for short pulses (e.g., 10ms).

  • To protect the IRF640 from overvoltage, a voltage clamp or a zener diode can be used to limit the maximum voltage across the drain-source terminals.

  • The recommended gate resistor value for the IRF640 is between 10Ω and 100Ω, depending on the specific application and switching frequency.

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