Datasheets
IRF640NLPBF by:

Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

Part Details for IRF640NLPBF by Infineon Technologies AG

Overview of IRF640NLPBF by Infineon Technologies AG

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Price & Stock for IRF640NLPBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7350
Newark N Channel Mosfet, 200V, 18A, To-262, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:18A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF640NLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # IRF640NLPBF-ND
DigiKey MOSFET N-CH 200V 18A TO262 Min Qty: 1 Lead time: 10 Weeks Container: Tube 544
In Stock
  • 1 $1.7800
  • 50 $1.4262
  • 100 $1.1734
  • 500 $0.9929
$0.9929 / $1.7800 Buy Now
DISTI # 70017531
RS MOSFET, Power, N-Ch, VDSS 200V, RDS(ON) 0.15Ohm, ID 18A, TO-262,PD 150W, VGS +/-20V | Infineon IRF640NLPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk 0
  • 5 $1.0600
$1.0600 RFQ
Rochester Electronics IRF640 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 3245
  • 1 $0.8690
  • 25 $0.8516
  • 100 $0.8169
  • 500 $0.7821
  • 1,000 $0.7387
$0.7387 / $0.8690 Buy Now
DISTI # SMC-IRF640NLPBF
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 1000
RFQ
DISTI # 2576887
element14 Asia-Pacific MOSFET, N-CH, 200V, 18A, TO-262-3 RoHS: Compliant Min Qty: 1 Container: Each 653
  • 1 $1.8714
  • 10 $1.5558
  • 100 $1.2403
  • 500 $1.0421
  • 1,000 $0.8807
  • 5,000 $0.8660
$0.8660 / $1.8714 Buy Now
DISTI # 2576887
Farnell MOSFET, N-CH, 200V, 18A, TO-262-3 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Each 653
  • 1 $2.0231
  • 10 $1.4736
  • 100 $1.1814
  • 500 $0.9915
$0.9915 / $2.0231 Buy Now
LCSC 200V 18A 150m11A10V 150W 4V250uA 1PCSNChannel TO-262-3 MOSFETs ROHS 11
  • 1 $1.1686
  • 10 $1.0170
  • 50 $0.9228
  • 100 $0.8253
  • 500 $0.7459
  • 1,000 $0.7268
$0.7268 / $1.1686 Buy Now

Part Details for IRF640NLPBF

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IRF640NLPBF Part Data Attributes

IRF640NLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF640NLPBF Infineon Technologies AG Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 247 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF640NLPBF

This table gives cross-reference parts and alternative options found for IRF640NLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640NLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF640NL Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN International Rectifier IRF640NLPBF vs IRF640NL
Part Number Description Manufacturer Compare
IRF640NL Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN International Rectifier IRF640NLPBF vs IRF640NL

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