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Transistors / Power Field-Effect Transistors / IRF640PBF
Datasheets
IRF640PBF by:

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3

Part Details for IRF640PBF by Vishay Intertechnologies

Results Overview of IRF640PBF by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRF640PBF Information

IRF640PBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF640PBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7355
Newark N Channel Mosfet, 200V, 18A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:18A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Msl:- Rohs Compliant: Yes |Vishay IRF640PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 824
  • 1 $1.4100
  • 10 $1.3000
  • 25 $1.3000
  • 50 $1.3000
  • 100 $1.3000
$1.3000 / $1.4100 Buy Now
DISTI # IRF640PBF
Avnet Americas MOSFET N-CHANNEL 200V - Bulk (Alt: IRF640PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 24 Weeks, 0 Days Container: Bulk 21845
  • 1 $0.6019
  • 10 $0.5609
  • 30 $0.5513
  • 50 $0.5417
  • 100 $0.5321
$0.5321 / $0.6019 Buy Now
DISTI # 63J7355
Avnet Americas MOSFET N-CHANNEL 200V - Bulk (Alt: 63J7355) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Bulk 810 Partner Stock
  • 1 $2.0800
  • 10 $1.4300
  • 25 $1.4100
  • 50 $1.3900
  • 100 $1.3700
$1.3700 / $2.0800 Buy Now
DISTI # 70078855
RS MOSFET, Power, N-Ch, VDSS 200V, RDS(ON) 0.18Ohm, ID 18A, TO-220AB, PD 125W, VGS +/-20V | Vishay PCS IRF640PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 0 Days Container: Bulk 812
  • 1 $0.9900
$0.9900 Buy Now
Bristol Electronics   41
RFQ
DISTI # IRF640PBF
TME Transistor: N-MOSFET, unipolar, 200V, 11A, 125W, TO220AB Min Qty: 1 2276
  • 1 $1.8130
  • 10 $1.3590
  • 50 $1.0310
  • 100 $0.9400
  • 250 $0.8790
  • 500 $0.7780
  • 1,000 $0.7240
  • 2,000 $0.5820
$0.5820 / $1.8130 Buy Now
Chip 1 Exchange INSTOCK 195007
RFQ
DISTI # IRF640PBF
Avnet Asia MOSFET N-CHANNEL 200V (Alt: IRF640PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days 0
RFQ
DISTI # IRF640PBF
EBV Elektronik MOSFET NCHANNEL 200V (Alt: IRF640PBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 25 Weeks, 0 Days EBV - 50
Buy Now
LCSC 200V 11A 0.1810V11A 125W 2V 1 N-channel ITO-220AB-3 MOSFETs ROHS 1669
  • 1 $0.7636
  • 10 $0.6156
  • 50 $0.5408
  • 100 $0.4675
  • 500 $0.4236
  • 1,000 $0.4001
$0.4001 / $0.7636 Buy Now
Wuhan P&S - Min Qty: 1 107000
  • 1 $7.5600
  • 100 $2.5200
  • 500 $2.3300
  • 1,000 $2.2700
$2.2700 / $7.5600 Buy Now

Part Details for IRF640PBF

IRF640PBF CAD Models

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IRF640PBF Part Data Attributes

Parametric Data
IRF640PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRF640PBF Vishay Intertechnologies Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-220AB
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 17 Weeks, 3 Days
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 580 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF640PBF

This table gives cross-reference parts and alternative options found for IRF640PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF640 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF640PBF vs IRF640
IRF640 onsemi Check for Price 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 4 PIN IRF640PBF vs IRF640
IRF640 NXP Semiconductors Check for Price 16A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN IRF640PBF vs IRF640
IRF640 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF640PBF vs IRF640
IRF640 Unitrode Corp (RETIRED) Check for Price Power Field-Effect Transistor, 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF640PBF vs IRF640
IRF640 Vishay Siliconix Check for Price Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRF640PBF vs IRF640
IRF640 STMicroelectronics Check for Price 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN IRF640PBF vs IRF640
IRF640,127 NXP Semiconductors Check for Price IRF640 IRF640PBF vs IRF640,127

IRF640PBF Related Parts

IRF640PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF640PBF is -55°C to 175°C.

  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.

  • The maximum allowable voltage for the IRF640PBF is 200V, but it's recommended to operate within the specified maximum voltage rating of 150V to ensure reliability.

  • Handle the IRF640PBF with ESD-protective equipment, wear an ESD strap, and ensure the workspace is ESD-safe to prevent damage from electrostatic discharge.

  • Store the IRF640PBF in a dry, cool place, away from direct sunlight, and in its original packaging or an ESD-protective bag to prevent damage.

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