Part Details for IRF640SPBF by Vishay Intertechnologies
Overview of IRF640SPBF by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF640SPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7356
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Newark | N Channel Mosfet, 200V, 18A, D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:18A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRF640SPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 131 |
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$1.3400 / $2.1000 | Buy Now |
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DISTI #
56AJ9914
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Newark | Mosfet, N-Ch, 200V, 18A, To-263 Rohs Compliant: Yes |Vishay IRF640SPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.4100 / $2.1900 | Buy Now |
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DISTI #
63J7356
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Avnet Americas | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK - Bulk (Alt: 63J7356) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Bulk | 151 Partner Stock |
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$1.5000 / $2.2700 | Buy Now |
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DISTI #
844-IRF640SPBF
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Mouser Electronics | MOSFET N-Chan 200V 18 Amp RoHS: Compliant | 4999 |
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$1.1800 / $1.9300 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 80Tube |
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$0.8150 / $1.0100 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.8150 / $1.0100 | Buy Now |
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DISTI #
IRF640SPBF
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TTI | MOSFET N-Chan 200V 18 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 2050 In Stock |
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$0.9100 / $1.0300 | Buy Now |
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DISTI #
IRF640SPBF
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Avnet Americas | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK - Bulk (Alt: IRF640SPBF) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Bulk | 2000 |
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$1.1800 | Buy Now |
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DISTI #
63J7356
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Avnet Americas | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK - Bulk (Alt: 63J7356) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Bulk | 151 Partner Stock |
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$1.5000 / $2.2700 | Buy Now |
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DISTI #
IRF640SPBF
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TME | Transistor: N-MOSFET, unipolar, 200V, 11A, 130W, D2PAK,TO263 Min Qty: 1 | 1050 |
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$0.7800 / $1.1800 | Buy Now |
Part Details for IRF640SPBF
IRF640SPBF CAD Models
IRF640SPBF Part Data Attributes
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IRF640SPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF640SPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | LEAD FREE, PLASTIC, D2PAK-3 | |
| Reach Compliance Code | not_compliant | |
| Factory Lead Time | 17 Weeks, 3 Days | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 580 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF640SPBF
This table gives cross-reference parts and alternative options found for IRF640SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF640STRRPBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Vishay Intertechnologies | IRF640SPBF vs IRF640STRRPBF |
| IRF640S | TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3, FET General Purpose Power | NXP Semiconductors | IRF640SPBF vs IRF640S |
| IRF640S | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | Vishay Intertechnologies | IRF640SPBF vs IRF640S |
| IRF640S | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF640SPBF vs IRF640S |
| IRFW640B | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Fairchild Semiconductor Corporation | IRF640SPBF vs IRFW640B |
| SIHF640S-GE3 | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Intertechnologies | IRF640SPBF vs SIHF640S-GE3 |
| IRF640S | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | IRF640SPBF vs IRF640S |
| IRF640STRLPBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRF640SPBF vs IRF640STRLPBF |
| IRF640S | 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | STMicroelectronics | IRF640SPBF vs IRF640S |
| IRF640S | 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF640SPBF vs IRF640S |