Part Details for IRF640STRRPBF by Vishay Intertechnologies
Overview of IRF640STRRPBF by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF640STRRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
05W6870
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Newark | Mosfet, N Channel, 200V, 18A, To-263-3, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:18A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay IRF640STRRPBF Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.8600 | Buy Now |
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DISTI #
31K2172
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Newark | N Channel Mosfet, 200V, 18A, D2-Pak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:18A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4Vrohs Compliant: Yes |Vishay IRF640STRRPBF Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.2800 / $1.7200 | Buy Now |
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DISTI #
IRF640STRRPBF
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Avnet Americas | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF640STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.9150 / $1.1624 | Buy Now |
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DISTI #
844-IRF640STRRPBF
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Mouser Electronics | MOSFET N-Chan 200V 18 Amp RoHS: Compliant | 1158 |
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$1.4300 / $2.2100 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$0.8750 / $0.9450 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$0.8750 / $0.9450 | Buy Now |
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Bristol Electronics | 750 |
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RFQ | ||
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Quest Components | 600 |
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$1.6104 / $3.9040 | Buy Now | |
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DISTI #
IRF640STRRPBF
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TTI | MOSFET N-Chan 200V 18 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel |
Americas - 3200 In Stock |
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$1.1500 | Buy Now |
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DISTI #
IRF640STRRPBF
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Avnet Americas | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF640STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.9150 / $1.1624 | Buy Now |
Part Details for IRF640STRRPBF
IRF640STRRPBF CAD Models
IRF640STRRPBF Part Data Attributes
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IRF640STRRPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF640STRRPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | LEAD FREE, PLASTIC, D2PAK-3 | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 580 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF640STRRPBF
This table gives cross-reference parts and alternative options found for IRF640STRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640STRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF640S | TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3, FET General Purpose Power | NXP Semiconductors | IRF640STRRPBF vs IRF640S |
| IRF640S | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | Vishay Intertechnologies | IRF640STRRPBF vs IRF640S |
| IRF640S | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF640STRRPBF vs IRF640S |
| IRFW640B | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Fairchild Semiconductor Corporation | IRF640STRRPBF vs IRFW640B |
| SIHF640S-GE3 | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Intertechnologies | IRF640STRRPBF vs SIHF640S-GE3 |
| IRF640S | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | IRF640STRRPBF vs IRF640S |
| IRF640STRLPBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRF640STRRPBF vs IRF640STRLPBF |
| IRF640S | 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | STMicroelectronics | IRF640STRRPBF vs IRF640S |
| IRF640S | 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF640STRRPBF vs IRF640S |
| IRF640STRL | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | Vishay Intertechnologies | IRF640STRRPBF vs IRF640STRL |