Part Details for IRF642R by Rochester Electronics LLC
Overview of IRF642R by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF642R
IRF642R CAD Models
IRF642R Part Data Attributes
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IRF642R
Rochester Electronics LLC
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Datasheet
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IRF642R
Rochester Electronics LLC
16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 580 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.22 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | NOT SPECIFIED | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 64 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF642R
This table gives cross-reference parts and alternative options found for IRF642R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF642R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQPF10N60C | 9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | Rochester Electronics LLC | IRF642R vs FQPF10N60C |
| FDU6644 | 67A, 30V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3 | Rochester Electronics LLC | IRF642R vs FDU6644 |
| SSS6N70A | 4A, 700V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN | Rochester Electronics LLC | IRF642R vs SSS6N70A |
| 2SK3461S | 85A, 60V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | IRF642R vs 2SK3461S |
| FQP5P20 | 4.8A, 200V, 1.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | IRF642R vs FQP5P20 |
| FQAF17N40 | 12.2A, 400V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN | Rochester Electronics LLC | IRF642R vs FQAF17N40 |
| SPB30N03L | Power Field-Effect Transistor, 30A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | IRF642R vs SPB30N03L |
| FDD26AN06A0 | 7A, 60V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | Rochester Electronics LLC | IRF642R vs FDD26AN06A0 |
| IRFAC30 | 3.6A, 600V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Rochester Electronics LLC | IRF642R vs IRFAC30 |
| IRFIP440 | Power Field-Effect Transistor, 6.4A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | International Rectifier | IRF642R vs IRFIP440 |