Part Details for IRF643 by Rochester Electronics LLC
Overview of IRF643 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF643
IRF643 CAD Models
IRF643 Part Data Attributes
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IRF643
Rochester Electronics LLC
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Datasheet
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IRF643
Rochester Electronics LLC
16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
Reach Compliance Code | unknown | |
Avalanche Energy Rating (Eas) | 580 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.22 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | NOT SPECIFIED | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 64 A | |
Qualification Status | COMMERCIAL | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF643
This table gives cross-reference parts and alternative options found for IRF643. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF643, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MTP15N15 | Power Field-Effect Transistor, 15A I(D), 150V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF643 vs MTP15N15 |
IRF643 | 16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF643 vs IRF643 |
IRF643 | 16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF643 vs IRF643 |
RFP15N12 | 15A, 120V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | IRF643 vs RFP15N12 |
IRF643 | Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF643 vs IRF643 |
RFP10N12 | Power Field-Effect Transistor, 10A I(D), 120V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | IRF643 vs RFP10N12 |
IRF643 | Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF643 vs IRF643 |
IRF643 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Thomson Consumer Electronics | IRF643 vs IRF643 |
IRF643 | Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Infineon Technologies AG | IRF643 vs IRF643 |
IRF643PBF | 16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Infineon Technologies AG | IRF643 vs IRF643PBF |