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Transistors / Power Field-Effect Transistors / IRF6613TRPBF
Datasheets
IRF6613TRPBF by:

Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

Part Details for IRF6613TRPBF by Infineon Technologies AG

Overview of IRF6613TRPBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF6613TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 86AK5362
Newark Mosfet, N-Ch, 40V, 150A, Directfet Mt Rohs Compliant: Yes |Infineon IRF6613TRPBF Min Qty: 4800 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 4,800 $1.0700
  • 9,600 $1.0500
$1.0500 / $1.0700 Buy Now
DISTI # 91Y4733
Newark Mosfet, N-Ch, 40V, 150A, 150Deg C, 89W, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:150A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.25V Rohs Compliant: Yes |Infineon IRF6613TRPBF Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $2.5000
  • 10 $2.0700
$2.0700 / $2.5000 Buy Now
DISTI # IRF6613TRPBFCT-ND
DigiKey MOSFET N-CH 40V 23A DIRECTFET Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 3568
In Stock
  • 1 $2.4000
  • 10 $1.9970
  • 100 $1.5894
  • 500 $1.3449
  • 1,000 $1.1411
  • 2,000 $1.0840
  • 4,800 $1.0433
  • 9,600 $1.0088
$1.0088 / $2.4000 Buy Now
DISTI # IRF6613TRPBF
Avnet Americas Trans MOSFET N-CH 40V 23A 7-Pin Direct-FET MT T/R - Tape and Reel (Alt: IRF6613TRPBF) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 4,800 $1.2509
$1.2509 Buy Now
DISTI # 942-IRF6613TRPBF
Mouser Electronics MOSFET 40V N-CH HEXFET 3.4mOhms 42nC RoHS: Compliant 2792
  • 1 $2.2100
  • 10 $1.8700
  • 100 $1.5100
  • 250 $1.4900
  • 500 $1.3000
  • 1,000 $1.0900
  • 4,800 $1.0400
$1.0400 / $2.2100 Buy Now
Future Electronics Single N-Channel 40 V 3.4 mOhm 42 nC HEXFET® Power Mosfet - DirectFET® RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 4800 Container: Reel 4800
Reel
  • 4,800 $1.0500
$1.0500 Buy Now
Future Electronics Single N-Channel 40 V 3.4 mOhm 42 nC HEXFET® Power Mosfet - DirectFET® RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 4800 Container: Reel 0
Reel
  • 4,800 $1.0500
$1.0500 Buy Now
DISTI # IRF6613TRPBF
Avnet Americas Trans MOSFET N-CH 40V 23A 7-Pin Direct-FET MT T/R - Tape and Reel (Alt: IRF6613TRPBF) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 4,800 $1.2509
$1.2509 Buy Now
DISTI # IRF6613TRPBF
TME Transistor: N-MOSFET, unipolar, 40V, 23A, 89W, DirectFET Min Qty: 4800 0
  • 4,800 $1.9500
$1.9500 RFQ
Ameya Holding Limited   Min Qty: 5 9600
  • 5 $2.9450
  • 1,200 $2.8564
  • 2,400 $2.7710
$2.7710 / $2.9450 Buy Now
Ameya Holding Limited Single N-Channel 40 V 3.4 mOhm 42 nC HEXFET® Power Mosfet - DirectFET® 1391
RFQ
DISTI # IRF6613TRPBF
Avnet Americas Trans MOSFET N-CH 40V 23A 7-Pin Direct-FET MT T/R - Tape and Reel (Alt: IRF6613TRPBF) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 4,800 $1.2509
$1.2509 Buy Now
DISTI # SP001526876
EBV Elektronik Trans MOSFET N-CH 40V 23A 7-Pin Direct-FET MT T/R (Alt: SP001526876) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 1 Weeks, 6 Days EBV - 4800
Buy Now
DISTI # 2579976
element14 Asia-Pacific MOSFET, N-CH, 40V, 150A, DIRECTFET MT-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape 4385
  • 1 $2.3147
  • 10 $1.9693
  • 100 $1.5725
  • 250 $1.3814
  • 500 $1.2345
  • 1,000 $1.0949
$1.0949 / $2.3147 Buy Now
DISTI # 2579976RL
element14 Asia-Pacific MOSFET, N-CH, 40V, 150A, DIRECTFET MT-7 RoHS: Compliant Min Qty: 100 Container: Reel 4385
  • 100 $1.5725
  • 250 $1.3814
  • 500 $1.2345
  • 1,000 $1.0949
$1.0949 / $1.5725 Buy Now
DISTI # 2579976
Farnell MOSFET, N-CH, 40V, 150A, DIRECTFET MT-7 RoHS: Compliant Min Qty: 5 Lead time: 13 Weeks, 1 Days Container: Cut Tape 4385
  • 5 $1.9952
  • 50 $1.5811
  • 250 $1.3427
  • 1,000 $1.1444
  • 2,000 $1.0792
$1.0792 / $1.9952 Buy Now
DISTI # 2579976RL
Farnell MOSFET, N-CH, 40V, 150A, DIRECTFET MT-7 RoHS: Compliant Min Qty: 50 Lead time: 13 Weeks, 1 Days Container: Reel 4385
  • 50 $1.5811
  • 250 $1.3427
  • 1,000 $1.1444
  • 2,000 $1.0792
$1.0792 / $1.5811 Buy Now
DISTI # 4319008
Farnell MOSFET, N-CH, 40V, 150A, DIRECTFET MT RoHS: Compliant Min Qty: 4800 Lead time: 13 Weeks, 1 Days Container: Reel 0
  • 4,800 $1.0528
  • 14,400 $1.0315
$1.0315 / $1.0528 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 4800 4800
  • 4,800 $1.3900
$1.3900 Buy Now
Win Source Electronics MOSFET N-CH 40V 23A DIRECTFET 190900
  • 45 $1.1310
  • 110 $0.9280
  • 170 $0.8990
  • 230 $0.8700
  • 300 $0.8410
  • 400 $0.7540
$0.7540 / $1.1310 Buy Now

Part Details for IRF6613TRPBF

IRF6613TRPBF Part Data Attributes

Parametric Data
IRF6613TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF6613TRPBF Infineon Technologies AG Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Additional Feature LOW CONDUCTION LOSS
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.0034 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XBCC-N3
JESD-609 Code e1
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 89 W
Pulsed Drain Current-Max (IDM) 180 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF6613TRPBF

This table gives cross-reference parts and alternative options found for IRF6613TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6613TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF6613TRPBF Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 International Rectifier IRF6613TRPBF vs IRF6613TRPBF
IRF6613 Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 Infineon Technologies AG IRF6613TRPBF vs IRF6613
IRF6613TR1 Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6613TRPBF vs IRF6613TR1
IRF6613 Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6613TRPBF vs IRF6613
IRF6613PBF Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 International Rectifier IRF6613TRPBF vs IRF6613PBF
Part Number Description Manufacturer Compare
IRF6613TR1 Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6613TRPBF vs IRF6613TR1
IRF6613PBF Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 International Rectifier IRF6613TRPBF vs IRF6613PBF
IRF6613TRPBF Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 International Rectifier IRF6613TRPBF vs IRF6613TRPBF
IRF6613 Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 Infineon Technologies AG IRF6613TRPBF vs IRF6613
IRF6613 Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6613TRPBF vs IRF6613

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