Part Details for IRF6636TRPBF by Infineon Technologies AG
Overview of IRF6636TRPBF by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IRF6636TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
91Y4740
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Newark | Mosfet, N-Ch, 20V, 81A, Directfet St, Transistor Polarity:N Channel, Continuous Drain Current Id:81A, Drain Source Voltage Vds:20V, On Resistance Rds(On):0.0032Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.45V, Power Rohs Compliant: Yes |Infineon IRF6636TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.2600 / $2.2100 | Buy Now |
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DISTI #
IRF6636TRPBF
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TME | Transistor: N-MOSFET, unipolar, 20V, 18A, 42W, DirectFET Min Qty: 4800 | 0 |
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$1.3800 | RFQ |
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DISTI #
2579983
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$1.3843 / $2.4537 | Buy Now |
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DISTI #
2579983RL
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Farnell | MOSFET, N-CH, 20V, 81A, DIRECTFET ST RoHS: Compliant Min Qty: 4800 Lead time: 51 Weeks, 1 Days Container: Reel | 0 |
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$1.1247 | Buy Now |
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DISTI #
2579983
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Farnell | MOSFET, N-CH, 20V, 81A, DIRECTFET ST RoHS: Compliant Min Qty: 4800 Lead time: 51 Weeks, 1 Days Container: Cut Tape | 0 |
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$1.1247 | Buy Now |
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Perfect Parts Corporation | 10752 |
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RFQ |
Part Details for IRF6636TRPBF
IRF6636TRPBF CAD Models
IRF6636TRPBF Part Data Attributes
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IRF6636TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF6636TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 28 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.0045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF6636TRPBF
This table gives cross-reference parts and alternative options found for IRF6636TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6636TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF6636TR1PBF | Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF6636TRPBF vs IRF6636TR1PBF |
| IRF6636TR1 | Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | IRF6636TRPBF vs IRF6636TR1 |
| IRF6636 | Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | Infineon Technologies AG | IRF6636TRPBF vs IRF6636 |
| IRF6636TRPBF | Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF6636TRPBF vs IRF6636TRPBF |
| IRF6636PBF | Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF6636TRPBF vs IRF6636PBF |
| IRF6636PBF | Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | Infineon Technologies AG | IRF6636TRPBF vs IRF6636PBF |