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Part Details for IRF6668TRPBF by Infineon Technologies AG
Overview of IRF6668TRPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for IRF6668TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
91Y4746
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Newark | Mosfet, N Ch, 80V, 55A, Directfet Mz-7, Transistor Polarity:N Channel, Continuous Drain Current Id:55A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.012Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRF6668TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 6734 |
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$0.9000 / $1.5900 | Buy Now |
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DISTI #
IRF6668TRPBFCT-ND
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DigiKey | MOSFET N-CH 80V 55A DIRECTFET MZ Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
7738 In Stock |
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$0.8176 / $1.9500 | Buy Now |
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DISTI #
IRF6668TRPBF
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Avnet Americas | Trans MOSFET N-CH 80V 55A 7-Pin Direct-FET MZ T/R - Tape and Reel (Alt: IRF6668TRPBF) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.9157 / $1.0466 | Buy Now |
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DISTI #
942-IRF6668TRPBF
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Mouser Electronics | MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC RoHS: Compliant | 1788 |
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$0.8170 / $1.6900 | Buy Now |
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DISTI #
E02:0323_00277014
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Arrow Electronics | Trans MOSFET N-CH Si 80V 55A 7-Pin Direct-FET MZ T/R Min Qty: 4800 Package Multiple: 4800 Lead time: 12 Weeks Date Code: 2248 | Europe - 9600 |
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$0.7951 / $0.8070 | Buy Now |
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DISTI #
V79:2366_26427796
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Arrow Electronics | Trans MOSFET N-CH Si 80V 55A 7-Pin Direct-FET MZ T/R Min Qty: 1 Package Multiple: 1 Date Code: 2132 | Americas - 2780 |
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$0.7838 / $1.1013 | Buy Now |
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DISTI #
V72:2272_13890378
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Arrow Electronics | Trans MOSFET N-CH Si 80V 55A 7-Pin Direct-FET MZ T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2103 Container: Cut Strips | Americas - 1546 |
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$1.1123 / $1.1386 | Buy Now |
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Future Electronics | Single N-Channel 80 V 15 mOhm 31 nC HEXFET® Power Mosfet - DirectFET® RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 4800 Container: Reel | 0Reel |
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$0.8450 | Buy Now |
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Future Electronics | Single N-Channel 80 V 15 mOhm 31 nC HEXFET® Power Mosfet - DirectFET® RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 4800 Container: Reel | 0Reel |
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$0.8450 | Buy Now |
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DISTI #
66723543
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Verical | Trans MOSFET N-CH Si 80V 55A 7-Pin Direct-FET MZ T/R Min Qty: 4800 Package Multiple: 4800 Date Code: 2248 | Americas - 9600 |
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$0.7933 / $0.8052 | Buy Now |
Part Details for IRF6668TRPBF
IRF6668TRPBF CAD Models
IRF6668TRPBF Part Data Attributes
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IRF6668TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF6668TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 55A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 24 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N3 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 89 W | |
| Pulsed Drain Current-Max (IDM) | 170 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF6668TRPBF
This table gives cross-reference parts and alternative options found for IRF6668TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6668TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF6668PBF | Power Field-Effect Transistor, 55A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF6668TRPBF vs IRF6668PBF |
| IRF6668 | Power Field-Effect Transistor, 55A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | IRF6668TRPBF vs IRF6668 |
| IRF6668PBF | Power Field-Effect Transistor, 55A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | Infineon Technologies AG | IRF6668TRPBF vs IRF6668PBF |
| IRF6668TRPBF | Power Field-Effect Transistor, 55A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF6668TRPBF vs IRF6668TRPBF |
| IRF6668TR1 | Power Field-Effect Transistor, 55A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | IRF6668TRPBF vs IRF6668TR1 |