Part Details for IRF6668TRPBF by International Rectifier
Overview of IRF6668TRPBF by International Rectifier
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF6668TRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRF6668TRPBF-ND
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DigiKey | IRF6668 - 12V-300V N-CHANNEL POW Min Qty: 318 Container: Bulk MARKETPLACE PRODUCT |
59676 In Stock |
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$0.9400 | Buy Now |
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Bristol Electronics | 404 |
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RFQ | ||
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Bristol Electronics | 1938 |
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RFQ | ||
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Quest Components | 1550 |
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$0.9731 / $2.5948 | Buy Now | |
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Rochester Electronics | IRF6668 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 59676 |
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$0.8108 / $0.9539 | Buy Now |
Part Details for IRF6668TRPBF
IRF6668TRPBF CAD Models
IRF6668TRPBF Part Data Attributes
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IRF6668TRPBF
International Rectifier
Buy Now
Datasheet
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IRF6668TRPBF
International Rectifier
Power Field-Effect Transistor, 55A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | ROHS COMPLIANT, ISOMETRIC-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 24 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 55 A | |
Drain-source On Resistance-Max | 0.015 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XBCC-N3 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 89 W | |
Pulsed Drain Current-Max (IDM) | 170 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | SILVER NICKEL | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF6668TRPBF
This table gives cross-reference parts and alternative options found for IRF6668TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6668TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF6668PBF | Power Field-Effect Transistor, 55A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF6668TRPBF vs IRF6668PBF |
IRF6668 | Power Field-Effect Transistor, 55A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | IRF6668TRPBF vs IRF6668 |
IRF6668TRPBF | Power Field-Effect Transistor, 55A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | Infineon Technologies AG | IRF6668TRPBF vs IRF6668TRPBF |
IRF6668PBF | Power Field-Effect Transistor, 55A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | Infineon Technologies AG | IRF6668TRPBF vs IRF6668PBF |
IRF6668TR1 | Power Field-Effect Transistor, 55A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | IRF6668TRPBF vs IRF6668TR1 |