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Overview of IRF6702M2DTR1PBF by International Rectifier
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- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRF6702M2DTR1PBF by International Rectifier
Part Data Attributes for IRF6702M2DTR1PBF by International Rectifier
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Part Life Cycle Code
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Transferred
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Ihs Manufacturer
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INTERNATIONAL RECTIFIER CORP
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Package Description
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CHIP CARRIER, R-XBCC-N4
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Pin Count
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4
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Avalanche Energy Rating (Eas)
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71 mJ
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Case Connection
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DRAIN
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Configuration
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COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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30 V
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Drain Current-Max (ID)
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15 A
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Drain-source On Resistance-Max
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0.0066 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
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R-XBCC-N4
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Number of Elements
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2
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Number of Terminals
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4
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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175 °C
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Package Body Material
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UNSPECIFIED
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Package Shape
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RECTANGULAR
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Package Style
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CHIP CARRIER
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Polarity/Channel Type
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N-CHANNEL
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Pulsed Drain Current-Max (IDM)
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130 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
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NO LEAD
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Terminal Position
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BOTTOM
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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